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Light-emitting diode and manufacturing method therefor

A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as loss of yield and device damage, and achieve the effects of shortening program time, reducing production costs, and increasing growth rate

Pending Publication Date: 2020-03-24
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the bonding process, it is easy to cause damage to the device and thus loss of yield.

Method used

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  • Light-emitting diode and manufacturing method therefor
  • Light-emitting diode and manufacturing method therefor
  • Light-emitting diode and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] There are many ways to improve the luminous efficiency of LEDs based on the AlGaInP material system, among which the brightness of LEDs can be greatly improved by using the flip-chip structure. However, the current spreading capability of the n-side and p-side in the flip-chip epitaxial structure will greatly affect the luminous efficiency and yield of the LED epitaxial structure. Such as figure 1 As shown, an AlGaInP flip-chip light-emitting diode includes a current spreading layer, an N-type layer, an MQW light-emitting layer, and a P-type layer. The current spreading layer usually uses an AlGaInP material system, but the AlGaInP system has a small temperature window during the epitaxy process. In addition, due to the limitation of In incorporation efficiency, the growth rate becomes sensitive with temperature. When the growth rate reaches 7 Å / s, it has reached the growth limit, and the quality of the grown crystal is difficult to control.

[0054] In view of the ab...

Embodiment 2

[0059] The method for obtaining a flip-chip red light-emitting diode through the epitaxial structure of the flip-chip red light-emitting diode in Example 1 specifically includes the following steps: setting a layer of transparent dielectric layer on the window layer of the above-mentioned epitaxial structure; Deposit mirror layer combination to form a full specular reflection layer, deposit a metal bonding layer under the mirror layer for bonding, select a permanent substrate, deposit a metal bonding layer on its surface, and bond the permanent substrate and The epitaxial structure is bonded. Then the epitaxial growth substrate, the buffer layer and the etching stop layer are thinned and removed by chemical etching to expose the contact layer, the first electrode is formed above the contact layer, and the contact layer other than the first electrode is etched to expose the current spreading layer, The current spreading layer is roughened to form a light-emitting surface, and a...

Embodiment 3

[0064] Different from Example 1, the current spreading layer Al x Ga 1-x As (0x Ga 1-x As (0

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Abstract

Provided are a light-emitting diode and a manufacturing method therefor. The manufacturing method comprises the steps of: (1) providing a substrate (100), an epitaxial structure being formed on the substrate (100), the epitaxial structure comprising a first semiconductor layer (111), an AlGaInP active layer (112), a second semiconductor layer (113), and a third semiconductor layer (114), the thirdsemiconductor layer (114) being made of AlGaAs and having a thickness of 30 um or more; (2) making a first electrode (121) and a second electrode (122) on the side surface of the epitaxial structuredistant from the substrate (100), wherein the first electrode (121) is electrically connected to the first semiconductor layer (111) and the second electrode (122) is electrically connected to the second semiconductor layer (113); and removing the substrate (100), wherein the third semiconductor layer (114) supports the epitaxial stack to ensure the physical stability thereof.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a light emitting diode and a manufacturing method thereof. Background technique [0002] Flip-chip light-emitting diodes are an effective technical means to further improve the luminous efficiency of light-emitting diodes due to their advantages such as no wire bonding, no electrode shading, and excellent heat dissipation. image 3 It shows a conventional flip-chip AlGaInP LED structure with a transparent substrate, which uses a transparent bonding layer 120 to connect the semiconductor structure (generally including the first type semiconductor layer 111, the active layer 112 and the second type semiconductor layer 113) Transfer to the transparent substrate 101, and make p and n ohmic contact electrodes on the opposite side of the transparent substrate, and the two electrodes are located on the same side, and then respectively connect the flip-chip welding e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/04H01L33/14H01L33/00
CPCH01L33/32H01L33/04H01L33/14H01L33/0075H01L33/0062H01L33/0093H01L2933/0016H01L33/44H01L33/62H01L33/405H01L33/30H01L33/38
Inventor 蔡景元吴俊毅李福龙王笃祥吴超瑜高文浩刘晓峰李维环舒立明刘超
Owner TIANJIN SANAN OPTOELECTRONICS