Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof

A microwave dielectric ceramic and microwave dielectric technology, which is applied to waveguide devices, electrical components, circuits, etc., achieves the effects of excellent microwave performance and simple preparation process

Active Publication Date: 2020-03-27
SHENZHEN SUNLORD ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the existing problems, the present invention provides a preparation method of microwave dielectric sintered powder material, microwave dielectric ceramics and its application

Method used

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  • Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof
  • Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof
  • Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof

Examples

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Effect test

Embodiment 1

[0027] Such as figure 1 As shown, this embodiment provides a method for preparing a microwave dielectric sintering powder material, which includes the following steps:

[0028] S1: Preparation of main powder xMgO-(1-x)TiO 2 , wherein, x is the mole fraction ratio of MgO, wherein x=0.45;

[0029] S2: The main powder 0.45MgO-0.55TiO 2 and modifier CaCO 3 ,P 2 o 5 , BaO, Co 3 o 4 , SiO 2 mix to obtain a mixture;

[0030] S3: adding water to the mixture, ball milling, and drying to obtain.

[0031] Among them, modifier CaCO 3 ,P 2 o 5 , BaO, Co 3 o 4 , SiO 2 Accounting for the main powder 0.45MgO-0.55TiO 2 The mass percentages were 12.5% ​​CaCO 3 , 0.05%P 2 o 5 , 0.05% BaO, 0.05% Co 3 o 4 , 1% SiO 2 . Among them, MgO and TiO 2 The particle size is 1 μm, CaCO3 , BaO and SiO 2 The particle size is 200nm.

[0032] In a specific embodiment, spray drying is used.

[0033] Among them, the main powder is 0.45MgO-0.55TiO 2 Prepared by the following method: MgO ...

Embodiment 2

[0035] This embodiment provides a method for preparing a microwave dielectric sintering powder material, which includes the following steps:

[0036] S1: Preparation of main powder xMgO-(1-x)TiO 2 , wherein, x is the mole fraction ratio of MgO, wherein x=0.46;

[0037] S2: the main powder 0.46MgO-0.54TiO 2 and modifier CaCO 3 ,P 2 o 5 , BaO, Co 3 o 4 , SiO 2 mix to obtain a mixture;

[0038] S3: adding water to the mixture, ball milling, and drying to obtain.

[0039] Among them, the modifier accounts for 0.46MgO-0.54TiO in the main powder 2 The mass percentages were 11.6% CaCO 3 , 0.1%P 2 o 5 , 0.05% BaO, 0.05% Co 3 o 4 , 0.1% SiO 2 . Among them, MgO and TiO 2 The particle size is 2 μm, CaCO 3 , BaO and SiO 2 The particle size is 150nm.

[0040] Wherein, the main powder is 0.46MgO-0.54TiO 2 Prepared by the following method: MgO and TiO 2 Mixed at a molar ratio of 0.46:0.54, added water, ball milled, dried, pre-calcined at 1150°C for 2 hours, and obtained...

Embodiment 3

[0042] This embodiment provides a method for preparing a microwave dielectric sintering powder material, which includes the following steps:

[0043] S1: Preparation of main powder xMgO-(1-x)TiO 2 , wherein, x is the mole fraction ratio of MgO, wherein x=0.47;

[0044] S2: The main powder 0.47MgO-0.53TiO 2 and modifier CaCO 3 ,P 2 o 5 , BaO, Co 3 o 4 , SiO 2 mix to obtain a mixture;

[0045] S3: adding water to the mixture, ball milling, and drying to obtain.

[0046] Among them, the modifier accounts for 0.47MgO-0.53TiO in the main powder 2 The mass percentages were 9.1% CaCO 3 , 0.1%P 2 o 5 , 1% BaO, 1% Co 3 o 4 , 0.05% SiO 2 . Among them, MgO and TiO 2 The particle size is 20μm, CaCO 3 , BaO and SiO 2 The particle size is 100nm.

[0047] Wherein, the main powder is 0.47MgO-0.53TiO 2 Prepared by the following method: MgO and TiO 2 Mixed at a molar ratio of 0.47:0.53, added water, ball milled, dried, pre-calcined at 1150°C for 2 hours, and obtained.

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Abstract

The invention provides a preparation method of a microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof. The method comprises the steps of preparing main powder xMgO-(1-x) TiO2, x is the molar fraction ratio of MgO, and x is larger than or equal to 0.45 and smaller than or equal to 0.475; mixing main powder xMgO-(1-x) TiO2 with modifiers CaCO3, P2O5, BaO, Co3O4 and SiO2 to obtain a mixture; adding water into the mixture and performing ball-milling, crushing and drying to obtain a microwave medium sintered powder material, wherein the mass percentages of the modifiers CaCO3, P2O5, BaO, Co3O4 and SiO2 in the main powder xMgO-(1-x) TiO2 are 7.8%-12.5%, 0.05%-1%, 0.05%-1%, 0.05%-1% and 0.05%-1% separately. The preparation process is simple and pollution-free, and the dielectric constant of the obtained microwave dielectric ceramic is adjustable in a range of 28-32.

Description

technical field [0001] The invention relates to the technical field of ceramic materials, in particular to a preparation method of microwave dielectric sintered powder material, microwave dielectric ceramics and applications thereof. Background technique [0002] Microwave dielectric ceramic materials refer to ceramics that are used as dielectric materials in microwave frequency circuits and perform one or more functions. They are widely used as dielectric substrates, resonators, filters, dielectric waveguide circuits, etc. in modern communications. Components are the key basic materials of modern communication technology. [0003] In the mobile 2G and 3G era, the communication frequency is low, and the circulator and isolator are filled with polyvinyl fluoride (with a dielectric constant of about 2.5) on the periphery of the upper and lower microwave ferrite materials to meet the requirements. With the popularization of the current 4G and 5G era, the communication frequenc...

Claims

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Application Information

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IPC IPC(8): C04B35/46C04B35/626C04B35/622H01P1/20H01P1/36H01P1/38
CPCC04B35/46C04B35/622C04B35/62605C04B35/62695C04B2235/3206C04B2235/3208C04B2235/3215C04B2235/3277C04B2235/34C04B2235/3418C04B2235/5436C04B2235/5445C04B2235/656C04B2235/6567H01P1/20H01P1/36H01P1/38
Inventor 刘剑聂敏彭虎
Owner SHENZHEN SUNLORD ELECTRONICS
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