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Inverted ultraviolet light emitting diode and preparation method thereof

A light-emitting diode, flip-chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous brightness and low quantum efficiency

Pending Publication Date: 2020-03-27
北京中科优唯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since P-type GaN has a strong absorption of deep ultraviolet light below 10-350nm, the external quantum efficiency of the ultraviolet LED with the inverted structure is too low, and the luminous brightness is low

Method used

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  • Inverted ultraviolet light emitting diode and preparation method thereof
  • Inverted ultraviolet light emitting diode and preparation method thereof
  • Inverted ultraviolet light emitting diode and preparation method thereof

Examples

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Comparison scheme
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Embodiment 1

[0026] This embodiment provides a flip-chip ultraviolet light emitting diode chip.

[0027] Inverted is relative to formal. LED front-mount chip is the earliest chip structure, and it is also a chip structure commonly used in low-power chips. The epitaxial layer of the LED front-mounted chip is a P-type semiconductor material layer, a light-emitting layer, an N-type semiconductor material layer, and a substrate layer from top to bottom; and in the LED chip with a front-mounted structure, the electrodes are located above the epitaxial layer, so that the electrodes will affect Therefore, in the prior art, a flip-chip LED chip structure is proposed. The N-type semiconductor material of the flip-chip LED chip is provided with a light-emitting layer and a P-type semiconductor layer below the N-type semiconductor layer. The light-emitting layer is also provided with structures such as electrodes under the P-type semiconductor material, thus avoiding the blocking of ultraviolet rays...

Embodiment 2

[0049] This embodiment provides a method for preparing a flip-chip ultraviolet light-emitting diode chip. For the structure of the flip-chip ultraviolet light-emitting diode chip, refer to the description of the first embodiment. In this embodiment, the main point is how to prepare the chip to achieve the designed performance and provide a sufficient yield of products.

[0050] Step 1, preparation of the basic epitaxial layer structure of UV-LED: epitaxial buffer layer, P-GaN layer, quantum well layer, N-AlGaN layer, u-AlGaN layer on the substrate in sequence to prepare the basic epitaxial layer structure of UV LED;

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Abstract

The invention discloses an inverted ultraviolet light emitting diode chip, which comprises an epitaxial structure of an ultraviolet light emitting diode, wherein a plurality of thinning regions are arranged on a P-type ohmic contact layer; a current diffusion layer which is arranged on the lower surface of the P-type ohmic contact layer, wherein along with the surface fluctuation of the P-type ohmic contact layer, the P-type ohmic contact layer is attached to the P-type ohmic contact layer; a DBR lens layer which is arranged on the lower surface of the current diffusion layer and is attached to the current diffusion layer along with surface fluctuation of the current diffusion layer; and a positive electrode, wherein one part of the positive electrode penetrates through the P-type ohmic contact layer and the current diffusion layer to be in contact with the P-type semiconductor material layer; the other part of the positive electrode is in contact with the current diffusion layer; according to the scheme, the light-emitting brightness of the ultraviolet light-emitting diode chip is improved.

Description

technical field [0001] This patent belongs to the technical field of semiconductors, and specifically relates to a flip-chip ultraviolet light-emitting diode and a preparation method thereof. Background technique [0002] In the prior art, the epitaxial structure of the ultraviolet light emitting diode is as figure 1 As shown, it includes a substrate 100, and an epitaxial nucleation layer, an undoped aluminum nitride layer 101, an n-type aluminum gallium nitride layer 102, an active layer 103, an electron blocking layer 104, and a P type hole-conducting layer 105 . The chip structure of the flip-chip UV light-emitting diode thus formed is as follows: figure 2 , to bond a new substrate. Since P-type GaN has a strong absorption of deep ultraviolet light below 10-350nm, the external quantum efficiency of the ultraviolet LED with the flip-chip structure is too low, and the luminous brightness is low. Contents of the invention [0003] This patent is proposed based on the ...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/10H01L33/14H01L33/32H01L33/00
CPCH01L33/007H01L33/325H01L33/145H01L33/06H01L33/10
Inventor 张向鹏崔志勇李勇强薛建凯王雪郭凯张晓娜
Owner 北京中科优唯科技有限公司
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