Supercharge Your Innovation With Domain-Expert AI Agents!

Compound taking fluorene as core, and preparation method and application thereof

A compound and general formula technology, applied in the field of semiconductors, can solve problems such as different performances, and achieve the effects of stable three-dimensional structure, large steric hindrance, and reduced energy loss.

Inactive Publication Date: 2020-04-07
JIANGSU SUNERA TECH CO LTD
View PDF7 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, for the collocation of OLED devices with different structures, the photoelectric functional materials used have strong selectivity, and the performance of the same material in devices with different structures may be completely different.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compound taking fluorene as core, and preparation method and application thereof
  • Compound taking fluorene as core, and preparation method and application thereof
  • Compound taking fluorene as core, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0111] Preparation of intermediate Ⅱ-1

[0112]

[0113] (1) In a 250mL three-neck flask, under the protection of nitrogen, add 0.01mol of raw material A-1, 0.015mol of raw material B-1, dissolve with a mixed solvent of toluene and ethanol (90mL of toluene, 45mL of ethanol), and then add 0.03 mol Na 2 CO 3 Aqueous solution (2M), stirred with nitrogen for 1h, then added 0.0001mol Pd(PPh 3 ) 4 , Heated to reflux for 15h, sampled and plated, the reaction was complete. Cool naturally, filter, spin evaporate the filtrate, and pass the residue through a silica gel column to obtain intermediate S1-1; HPLC purity 95.3%, yield 84.8%;

[0114] Elemental analysis structure (molecular formula C 21 h 19 NO 4 ): theoretical value C, 72.19; H, 5.48; N, 4.01; 0, 18.32; test value: C, 72.18; ESI-MS (m / z) (M+): theoretical value 349.13, found value 349.29.

[0115] (2) In a 250mL three-neck flask, under the protection of nitrogen, add 0.02mol of intermediate S1-1, dissolve it with 1...

Embodiment 1

[0136] The preparation of embodiment 1 compound 4

[0137]

[0138] In a 250ml three-neck flask, under the protection of nitrogen, add 0.01mol raw material I-1, 0.012mol intermediate III-1, 150ml toluene and stir to mix, then add 0.03mol sodium tert-butoxide, 5×10 -5 molPd 2 (dba) 3 , 5×10 -5 mol of tri-tert-butylphosphine, heated to 105°C, refluxed for 24 hours, sampling plate, showed no bromide remaining, the reaction was complete; naturally cooled to room temperature, filtered, and the filtrate was rotary evaporated under reduced pressure (-0.09MPa, 85°C ), through a neutral silica gel column, to obtain the target product, HPLC purity 96.9%, yield 86.2%;

[0139] Elemental analysis structure (molecular formula C 52 h 35 NO 2 ): theoretical value C, 88.48; H, 5.00; N, 1.98; 0, 4.53; test value: C, 88.48; HPLC-MS: The molecular weight of the material is 705.27, and the measured molecular weight is 705.13.

Embodiment 2

[0140] The preparation of embodiment 2 compound 17

[0141]

[0142] The preparation method of compound 17 is the same as that in Example 1, except that starting material I-1 is replaced by starting material I-2. Elemental analysis structure (molecular formula C 65 h 45 NO): Theoretical C, 91.20; H, 5.30; N, 1.64; O, 1.87; Tested: C, 91.19; H, 5.30; N, 1.64; HPLC-MS: The molecular weight of the material is 855.35, and the measured molecular weight is 855.22.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a compound taking fluorene as a core, and a preparation method and an application thereof, and belongs to the technical field of semiconductors. The compound provided by the invention has the structure represented by a general formula (I). The invention also discloses the preparation method and the application of the compound taking fluorene as the core. The compound provided by the invention contains fluorene derivatives and six-membered ring derivative structures, has relatively high glass transition temperature and molecular thermal stability, proper HOMO and LUMO energy levels and relatively high Eg, and can effectively improve the photoelectric property of an OLED device and prolong the service life of the OLED device through device structure optimization.

Description

technical field [0001] The invention relates to a compound with fluorene as the core, a preparation method and application thereof, and belongs to the technical field of semiconductors. Background technique [0002] Organic Light Emission Diodes (OLED) device technology can be used not only to manufacture new display products, but also to make new lighting products. It is expected to replace the existing liquid crystal display and fluorescent lighting, and has a wide application prospect. The OLED light-emitting device is like a sandwich structure, including electrode material film layers and organic functional materials sandwiched between different electrode film layers. Various functional materials are superimposed on each other according to the application to form an OLED light-emitting device. OLED light-emitting devices are current devices. When a voltage is applied to the electrodes at both ends, and the positive and negative charges in the organic layer functional mat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07D491/048C07D471/04C07D495/04C07D497/04C07D491/147C07D491/056C07D498/04C07D265/34C07D405/14C07D405/10C07D413/14C07D413/10C07D513/04C07D279/14C07D513/14C07D417/10C07D241/36C07D421/00C07D401/10C07D491/052C07D405/04C07D413/04C07D471/14C07D221/18C07D498/14C07D401/14C07D219/08C07D487/04C09K11/06H01L51/50H01L51/54
CPCC07D491/048C07D471/04C07D495/04C07D497/04C07D491/147C07D491/056C07D498/04C07D265/34C07D405/14C07D405/10C07D413/14C07D413/10C07D513/04C07D279/14C07D513/14C07D417/10C07D241/36C07D421/00C07D401/10C07D491/052C07D405/04C07D413/04C07D471/14C07D221/18C07D498/14C07D401/14C07D219/08C07D487/04C09K11/06C09K2211/1007C09K2211/1011C09K2211/1014C09K2211/1022C09K2211/1033C09K2211/1029C09K2211/1037C09K2211/104C09K2211/1044C09K2211/1088C09K2211/1092C09K2211/1096H10K85/622H10K85/624H10K85/623H10K85/626H10K85/636H10K85/633H10K85/653H10K85/655H10K85/615H10K85/631H10K85/654H10K85/6576H10K85/6574H10K85/657H10K85/6572H10K50/15H10K50/18H10K50/11
Inventor 李崇庞羽佳王芳张兆超
Owner JIANGSU SUNERA TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com