Power semiconductor device and method for manufacturing power semiconductor device
A technology for power semiconductors and manufacturing methods, which is applied to semiconductor devices, semiconductor/solid-state device components, and electric solid-state devices, etc., can solve problems such as cost increase, deterioration of thermal resistance of contact parts, etc., to suppress cracks, reduce shrinkage, The effect of suppressing warpage
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Embodiment approach 1
[0018]
[0019] figure 1 It is a sectional view showing the structure of the power semiconductor device 101 of this embodiment. The power semiconductor device 101 is widely used in home appliances, industries, automobiles, trains, and the like, for example. Below, refer to figure 1 The configuration of the power semiconductor device 101 will be described.
[0020] The power semiconductor device 101 has an insulating pattern 1 , a conductive pattern 2 , an IGBT chip 4 , a diode chip 6 , inner frames 9 , 12 , main terminals 10 , aluminum wires 11 , signal terminals 13 , an embedded case 14 and heat dissipation pin fins 16 . Two conductive patterns 2 are formed on the upper surface of the insulating pattern 1 , and an IGBT chip 4 and a diode chip 6 as semiconductor elements are bonded to these conductive patterns 2 via solders 3 and 5 , respectively.
[0021] The inner frame 9 is bonded to the upper surface of the IGBT chip 4 via the solder 7 , and is bonded to the upper sur...
Embodiment approach 2
[0059]
[0060] Figure 5 It is a cross-sectional view showing the structure of the power semiconductor device 102 according to the second embodiment. For the power semiconductor device 102 , the inner surface of the built-in housing 14 has a recess 15 . Other than that, the configuration of the power semiconductor device 102 is the same as that of the power semiconductor device 101 of the first embodiment.
[0061] exist Figure 5 Here, the recess 15 is formed at a position straddling the boundary between the encapsulating resin 21 and the encapsulating resin 22 , and both the encapsulating resin 21 and the encapsulating resin 22 are formed so as to enter the recess 15 . Thereby, the sealing resin 21 and the sealing resin 22 are firmly bonded to the embedded case 14 by the anchor effect. As a result, even when stress due to the difference in coefficient of linear expansion of the sealing resins 21 and 22 occurs at high temperature, interfacial delamination of the sealing...
Embodiment approach 3
[0067]
[0068] Figure 6 It is a cross-sectional view showing the structure of the power semiconductor device 103 according to the third embodiment. Power semiconductor device 103 has polyimide layer 17 between encapsulation resin 21 and encapsulation resin 22 . Other than that, the configuration of the power semiconductor device 103 is the same as that of the power semiconductor device 102 of the second embodiment.
[0069] The polyimide layer 17 has a lower Vickers hardness than the cured encapsulation resins 21 and 22 , and thus absorbs stress between the encapsulation resins 21 and 22 . Therefore, the adhesiveness between the sealing resin 21 and the polyimide layer 17 and between the polyimide layer 17 and the sealing resin 22 can be improved. Thus, a highly reliable power semiconductor device 103 is obtained.
[0070]
[0071]Since the power semiconductor device 103 according to Embodiment 3 has the polyimide layer 17 between the encapsulating resin 21 and the en...
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