Flexible nanofiber gallium tin oxide transistor based on nano-cluster dielectric layer and preparation method

Abstract

The invention discloses a flexible nanofiber gallium tin oxide transistor based on a nano-cluster dielectric layer and a preparation method. The flexible nanofiber gallium tin oxide transistor disclosed by the invention comprises a top source electrode layer, a top drain electrode layer, a carrier channel layer of a nanofiber structure, a nano-cluster structure dielectric layer, a bottom gate electrode layer and a substrate which are sequentially arranged in a stacked mode from top to bottom, wherein the carrier channel layer of the nanofiber structure is a gallium tin oxide filament cluster with the diameter of 100-200nm, and is prepared based on a sol method. The nanofiber structure is prepared by adopting an inorganic metal oxide material, the problem that the direction and quantity ofnanofibers are not easy to control in the traditional process is solved by utilizing a brushing method in the preparation process, and the advantages of simple process and low cost are achieved. The FET device prepared based on the method has good electrical properties, and is beneficial to further application in large-scale circuit design.

Description

technical field [0001] The invention relates to the technical field of field effect transistors, in particular to a flexible nanofiber gallium tin oxide transistor based on a nanocluster dielectric layer and a preparation method thereof. Background technique [0002] In recent years, with the increasing demand for advanced electronic devices, field-effect transistor (FET) devices have gradually attracted a lot of research and are regarded as one of the most critical basic devices in modern electronic device applications. . [0003] One-dimensional nanostructured devices, such as nanofibers (NFs), etc., are currently Has been called a research hotspot. The NF structure FET channel layer is one or several fibrous semiconductor nano-filaments, which can effectively reduce the scattering of carriers and form an effective conductive channel compared with the traditional thin-film structure FET. However, the traditional processes for preparing NF, such as: electrospinning, evap...

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Problems solved by technology

[0005] In order to solve the above-mentioned technical problems, the object of the present invention is to propose a flexible nanofiber gallium tin oxide transistor based on a nano-cluster dielectric layer and a preparation method thereof. The nanofiber structure is prepared by using an inorganic metal oxide material. In the preparation process, the method of brushing is used to improve the difficulty of controlling the direction and quantity of nanofibers in the traditional process, and it has the advantages of simple process and low cost

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