Wafer cleaning and drying device

A drying device and wafer technology, which is applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of excessive particle quantity and water residue on the whole wafer, so as to improve the utilization rate and reduce water stains. Residual, avoid the effect of excessive quantity

Active Publication Date: 2020-05-01
HANGZHOU ZHONGGUI ELECTRONICS TECH CO LTD
View PDF7 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the difference in the material of the wafer itself and the influence of the surface texture pattern, water stains will remain, and the amount of particulate matter in the entire wafer will exceed the standard

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer cleaning and drying device
  • Wafer cleaning and drying device
  • Wafer cleaning and drying device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] The core of the present invention is to provide a wafer cleaning and drying device, which can effectively remove water stains on the surface of the wafer and prevent the particle quantity of the entire wafer from exceeding the standard.

[0033] Please refer to Figure 1-Figure 5 , figure 1 The front view of the wafer cleaning and drying device provided for the specific embodiment of the present invention during wafer cleaning (the front side wall of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a wafer cleaning and drying device, which comprises a box body for cleaning a wafer, a supporting mechanism arranged in the box body and used for bearing the wafer and a spraying pipe arranged at the opening and used for spraying dry gas to the surface of the cleaned wafer, wherein the top of the box body is provided with an opening for the wafer to enter and exit from thebox body; and the supporting mechanism can ascend and descend. According to the wafer cleaning and drying device, the spraying pipe is arranged at the opening of the box body, and the spraying pipe isused for spraying dry gas to the cleaned wafer to dry the surface of the wafer. What can be understood is that the mode utilizes the Marangoni effect, that is, the surface tension gradient differenceis utilized to remove water attached to the surface of the wafer, and compared with the prior art that cleaning liquid on the surface of the wafer is spin-dried through centrifugal force, the wafer cleaning and drying device can effectively reduce water stain residues and prevent the number of particles of the whole wafer from exceeding the standard.

Description

technical field [0001] The invention relates to the technical field of semiconductor process equipment, and more specifically, to a wafer cleaning and drying device. Background technique [0002] In the manufacturing process of semiconductor integrated circuit chips, it is necessary to perform chemical mechanical planarization processing on the wafer, that is, to use a large amount of grinding liquid and different chemical reagents to polish the wafer surface. This chemical mechanical planarization process belongs to In the wet process, at the end of the process, the wafer needs to be cleaned and dried to remove particles attached to the wafer surface. [0003] In the prior art, the surface of the wafer is usually dried by spinning and drying, so as to remove the cleaning solution on the surface of the wafer by utilizing the centrifugal force generated when the wafer rotates at a high speed. However, due to the difference in the material of the wafer itself and the influenc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/687
CPCH01L21/67034H01L21/67057H01L21/68792H01L21/67751H01L21/67742
Inventor 沈凌寒
Owner HANGZHOU ZHONGGUI ELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap