SiC insulated gate bipolar transistor with NiO/SiC pn heterojunction

Abstract

The invention discloses a SiC insulated gate bipolar transistor with a NiO / SiC pn heterojunction, which is characterized in that an n-SiC buffer layer and an n-SiC drift region are sequentially arranged on a p-NiO layer upwards, a p-SiC well region is embedded in the n-SiC drift region, and a p-SiC ohmic contact region and an n-SiC emitter region are embedded in the p-SiC well region; the upper surfaces of the n-SiC drift region, the p-SiC well region and the n-SiC emitter region are jointly covered with a gate insulating dielectric film and a gate; the upper surfaces of the p-SiC ohmic contact region and the n-SiC emitter region are jointly covered with an emitter; the gate is covered with an insulating passivation dielectric film; the upper surfaces of the emitter and the insulating passivation dielectric film are jointly covered with metal; and the lower end surface of the p-NiO layer is covered with a collector. According to the structure of the SiC insulated gate bipolar transistor, the forward conduction performance of the SiC n-IGBT is enabled to be better, and the on-state power consumption is lower.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a SiC insulated gate bipolar transistor with a NiO / SiC pn heterojunction. Background technique [0002] Silicon carbide (SiC) material has the advantages of large band gap, high thermal conductivity, high critical avalanche breakdown electric field strength, high saturated carrier drift speed and good thermal stability. Power electronic devices made of SiC have lower Its on-state voltage drop, higher operating frequency, lower power consumption, smaller size and better high temperature resistance are more suitable for application in power electronic circuits. SiC Insulated Gate Bipolar Transistor (IGBT), as one of the SiC high voltage devices, has the advantages of high blocking voltage, strong current capacity, and fast switching speed. It can effectively improve the high voltage direct current transmission system (HVDC) and smart grid power transmission System, power de...

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Problems solved by technology

[0007] The purpose of the present invention is to provide a SiC insulated gate bipolar transistor with NiO / SiC pn heterojunction, which solves the problem of SiC n-IGBT in the prior art The positive turn-on voltage is high, and the conductance modulation effect in the n- drift region is poor, resulting in a large on-state resistance.

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