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A non-uniformity correction circuit for apd detector array

A non-uniformity correction and APD array technology, applied in the field of APD detectors, can solve problems such as difficult integration, high power consumption, and inability to completely avoid non-uniformity, and achieve the effect of small system scale and low power consumption

Active Publication Date: 2021-06-15
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the first method cannot completely avoid the occurrence of non-uniformity. Although the second method can solve the non-uniformity problem of the APD array, it is difficult to integrate due to the large system size and high power consumption due to the addition of DSP / FPGA

Method used

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  • A non-uniformity correction circuit for apd detector array
  • A non-uniformity correction circuit for apd detector array
  • A non-uniformity correction circuit for apd detector array

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Embodiment 1

[0044] See figure 1 , figure 1 A schematic structural diagram of a non-uniformity correction circuit for an APD detector array provided by an embodiment of the present invention. This embodiment provides a non-uniformity correction circuit for an APD detector array, the correction circuit includes an APD array module, a reference module, a phase detector, and a charge pump, wherein,

[0045] The APD array module is used to perform current sensing and shaping processing on the second input signal to obtain the first digital signal after performing reset processing according to the first input signal;

[0046] The reference module is configured to perform current sensing and shaping processing on the fourth input signal to obtain the second digital signal after performing reset processing according to the third input signal;

[0047] The phase detector is connected to the APD array module and the reference module, and is used to compare the phase difference between the first d...

Embodiment 2

[0064] On the basis of the first embodiment above, please refer to image 3 , image 3 A schematic structural diagram of another non-uniformity correction circuit for an APD detector array provided by the embodiment of the present invention. It can be seen that this embodiment is based on the non-uniformity correction circuit for an APD detector array provided in the first embodiment above. , also includes a reverse bias voltage regulation module.

[0065] Specifically, the reverse bias adjustment module in this embodiment is connected to the charge pump and the APD array module, and is used to buffer the first processing signal to obtain the second processing signal Vo, and input the second processing signal to the APD array module . Since the first processing signal Vout output by the charge pump has no large current drive capability, if the output voltage of the charge pump is directly connected to the anode of the APD array unit, the output voltage of the charge pump may...

Embodiment 3

[0073] On the basis of the above-mentioned embodiment 2, the circuit of each APD array unit, reference module, phase detector, charge pump, and reverse bias voltage adjustment module in the APD array module is designed in detail as follows in this embodiment, but not limited Based on this design, it is further illustrated that the non-uniformity correction circuit oriented to the APD detector array provided by this embodiment can solve the problem of non-uniformity of the traditional APD array, and the correction circuit of this embodiment is composed of modules such as a phase detector and a charge pump. The system is small in scale and low in power consumption, and can realize monolithic integration with a large array of APDs, specifically:

[0074] See Figure 5 , Figure 5 A schematic circuit diagram of an APD array unit in an APD detector array-oriented non-uniformity correction circuit provided for an embodiment of the present invention. In this embodiment, each APD array...

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Abstract

The invention discloses a non-uniformity correction circuit for an APD detector array, comprising: an APD array module, which is used for performing current induction and shaping processing on a second input signal to obtain a first digital signal after being reset according to a first input signal signal; a reference module, used to perform current sensing and shaping processing on the fourth input signal to obtain a second digital signal after resetting according to the third input signal; a phase detector, connected to the APD array module and the reference module, for comparing the first , the phase difference of the second digital signal to obtain the first phase difference signal and the second phase difference signal; the charge pump is connected to the phase detector, and is used to charge and discharge the charge pump according to the first and second phase difference signals to obtain the first processing Signal. The invention uses the reference module as the standard response speed corresponding to the single photon response speed in the APD array module, makes the response speed of the APD array module consistent with the response speed of the reference module, and solves the non-uniformity problem of the APD array in the traditional APD detector.

Description

technical field [0001] The invention belongs to the technical field of APD detectors, and in particular relates to a non-uniformity correction circuit for APD detector arrays. Background technique [0002] Avalanche Photodiode (APD) working in Geiger mode can quickly detect and respond to single-photon signals. It has the characteristics of small size, high gain, and high sensitivity. It is widely used in optical communication, medical detection, military survey, and automotive radar. and other fields. [0003] In recent years, the single-photon detection technology based on APD array has made great progress. However, limited by the preparation process and application environment, it is difficult to maintain the uniformity of the APD pixels in the area array. Even if each APD image The elements have the same external bias voltage and the same illumination, and the magnitude of the photocurrent of the avalanche generated by the single photon response is also different, so th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J11/00H01L31/02
CPCG01J11/00H01L31/02H01L31/02002
Inventor 王斌肖天佑郝丹阳胡辉勇舒斌王利明韩本光
Owner XIDIAN UNIV
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