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Laser lift-off method and laser lift-off apparatus

A laser lift-off, laser technology, used in electrical components, electrical solid-state devices, semiconductor/solid-state device manufacturing, etc.

Active Publication Date: 2020-05-12
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In mass production and manufacturing, time cost is particularly important. Shortening the production cycle can greatly reduce costs. At present, the efficiency of laser stripping needs to be further improved.

Method used

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  • Laser lift-off method and laser lift-off apparatus
  • Laser lift-off method and laser lift-off apparatus
  • Laser lift-off method and laser lift-off apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] (1) Provide a light-transmitting rigid layer 13, a sacrificial layer 12 and a functional layer 11 that are attached to each other, the light-transmitting rigid layer 13 is glass, and the sacrificial layer 12 is amorphous silicon, and place it on a movable support platform 30 ;

[0060] (2) After the laser beam with an output wavelength of 355nm is collimated by beam expansion, it is divided into two laser beams through a beam splitter, and then reflected by the mirror 23 respectively, and the two mutually interfering laser beams are irradiated through the light-transmitting rigid layer 13 At the junction of the light-transmitting rigid layer 13 and the sacrificial layer 12, an interference phenomenon occurs, forming many light and dark interference fringes, and the strong light energy at the bright fringes can decompose the sacrificial layer 12, and the laser output power is set to 10W;

[0061] (3) Using the controller 40 to control the supporting platform 30 to move t...

Embodiment 2

[0063] (1) Provide the light-transmitting rigid layer 13, the sacrificial layer 12 and the functional layer 11 that are attached to each other, the light-transmitting rigid layer 13 is sapphire, and the sacrificial layer 12 is silicon oxide, and this test piece 10 to be peeled off is placed on a movable on the support platform 30;

[0064] (2) After the laser beam with an output wavelength of 308nm is collimated by beam expansion, it passes through a pinhole filter 24, and then is incident on the Laue mirror interference device 25, and directly incident on the laser beam of the test piece 10 to be peeled off and passed through the Laue mirror. The mirror-reflected laser beam passes through the light-transmitting rigid layer 13 and irradiates at the junction of the light-transmitting rigid layer 13 and the sacrificial layer 12, resulting in an interference phenomenon, forming many light and dark interference fringes, and the strong light energy at the bright fringes can make Th...

Embodiment 3

[0067] (1) Provide the light-transmitting rigid layer 13, sacrificial layer 12 and functional layer 11 that are attached to each other, the light-transmitting rigid layer 13 is quartz, and the sacrificial layer 12 is a photoresist, and this test piece 10 to be stripped is placed on a movable on the support platform 30;

[0068] (2) After the laser beam with an output wavelength of 266nm is collimated by beam expansion, it passes through the phase grating 26 and irradiates through the light-transmitting rigid layer 13 at the junction of the light-transmitting rigid layer 13 and the sacrificial layer 12, resulting in an interference phenomenon, forming many Light and dark interference fringes, strong light energy at the bright fringes can decompose the sacrificial layer 12, and the laser output power is set to 1W;

[0069] (3) Using the controller 40 to control the supporting platform 30 to move the test piece 10 to be stripped, so that multiple interference fringes scan and irr...

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Abstract

The invention discloses a laser lift-off method and a laser lift-off device, and the method comprises the following steps: forming a laser interference region with bright and dark fringes on a sacrificial layer of a to-be-lift-off test piece through laser interference, and decomposing the sacrificial layer corresponding to the bright fringes through the bright fringes in the laser interference region; and moving the to-be-lift-off test piece, and irradiating the bright fringes to the area where the dark fringes on the original sacrificial layer are located, so that the sacrificial layer in thewhole laser interference area is decomposed. According to the method, rapid large-area stripping of the functional layer can be rapidly achieved, the reliability is high, and the laser stripping efficiency is greatly improved.

Description

technical field [0001] The invention relates to the field of flexible electronic preparation, in particular to a laser lift-off method and a laser lift-off device. Background technique [0002] In recent years, with the rapid development of flexible electronic technology, more and more people pay attention to the characteristics of flexible electronic devices, such as light and thin, bendable deformation, etc., making them have broad application prospects in information, energy, medical and other fields. However, the manufacturing process of many electronic devices requires a high temperature environment, and because the substrate of flexible electronic devices is usually a polymer polymer, the heat resistance is average, in many cases it cannot be manufactured using the traditional electronic device process, often Electronic devices need to be fabricated on a rigid carrier (such as glass, sapphire, etc.) through a sacrificial layer, and then peeled off and transferred to a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/6836H01L2221/68386Y02P70/50
Inventor 冯雪艾骏陈颖
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG