Unlock instant, AI-driven research and patent intelligence for your innovation.

Multi-stage semiconductor process virtual metering method based on Gaussian process and convolutional neural network

A convolutional neural network and Gaussian process technology, applied in the field of probabilistic virtual metrology for multi-stage semiconductor processes, can solve problems such as unreliable predicted values ​​and models that cannot reflect the credibility of predicted values, so as to improve detection accuracy and reliability , enhance the accuracy of forecasting, and improve the effect of economic benefits

Active Publication Date: 2020-05-19
ZHEJIANG UNIV
View PDF15 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] On the other hand, past methods can only obtain scalar predictions of outcomes, which means that the model cannot reflect the confidence of the predicted values
In theory, the higher the uncertainty, the less reliable the predicted value at this time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-stage semiconductor process virtual metering method based on Gaussian process and convolutional neural network
  • Multi-stage semiconductor process virtual metering method based on Gaussian process and convolutional neural network
  • Multi-stage semiconductor process virtual metering method based on Gaussian process and convolutional neural network

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be noted that the following embodiments are intended to facilitate the understanding of the present invention, but do not limit it in any way.

[0060] Taking the estimation of the deposition process results of a domestic factory as an example, the virtual measurement of the wafer height value through the multi-stage chemical process is carried out.

[0061] During production, the chemical vapor deposition process is similar to the process of applying solid thin film coatings on surfaces often used in the semiconductor industry. This process is complex because it involves many chemical reactions, and the reactors in a multi-reactor system are independently controlled to allow the film to be deposited in the process chamber under various conditions. Chemical vapor deposition equipment is equipped with a considerable number of sensors. Th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a multi-stage semiconductor process virtual metering method based on a Gaussian process and a convolutional neural network, and the method comprises the following steps: (1), collecting an output signal of a process variable sensor related to a to-be-detected variable in a to-be-detected control process; (2) preprocessing the acquired signal data of the process variable, and removing an abnormal value; (3) rearranging the preprocessed data and reserving stage information of the data; (4) performing feature extraction on all data and establishing a regression model; (5)storing the current parameter weight, calculating the final maximum posterior value, and if the final maximum posterior value does not meet the stop condition, updating the parameter and repeating thestep (4) until the stop condition is met; and (6) storing the parameter value of each layer, recalculating the new prediction point and obtaining the probability distribution of the geometric quality. By utilizing the method and the device, the virtual metering result with higher precision can be obtained, the uncertainty of the prediction result is calculated, and a numerical basis is provided for further improvement of the model.

Description

technical field [0001] The invention relates to the field of data mining in industrial systems, in particular to a multi-stage semiconductor process probabilistic virtual metering method based on Gaussian processes and convolutional neural networks. Background technique [0002] Semiconductor manufacturing involves many stages. For example, in the production of electronic chips, a wire saw first cuts a silicon ingot into segments, then goes through several flat stages, including cleaning, polishing and grinding, and then transfers the treated wafer to the front and back where the final chip is formed. end process. Due to the high-throughput nature of semiconductor manufacturing and the high cost of measuring wafers, it is not possible to measure all quality variables of produced wafers at every stage. Due to the limitations of physical measurements, wafer-to-wafer modeling is increasingly being used to predict the quality of the final product, allowing timely adjustment of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F30/27G06N3/04G06N3/08
CPCG06N3/08G06N3/048G06N3/045
Inventor 谢磊吴小菲陈启明苏宏业
Owner ZHEJIANG UNIV