Gallium oxide field effect transistor and preparation method thereof
A gallium oxide field and transistor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low breakdown voltage and conduction characteristics of field-effect transistors, and achieve improved breakdown field strength, The effect of suppressing the peak electric field and uniform distribution of the electric field
Active Publication Date: 2020-05-19
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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- Claims
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Problems solved by technology
[0007] However, currently reported Ga 2 o 3 The breakdown voltage and conduction characteristics of field effect transistor (FET) devices are still far below the expected value of the material
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[0035] In the following description, specific details such as specific system structures and technologies are presented for illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
[0036] In order to make the purpose, technical solution and advantages of the present invention clearer, specific embodiments will be described below in conjunction with the accompanying drawings.
[0037] see figure 1 , which shows a schematic cross-sectional structure of a gallium oxide field effect transistor provided by an embodiment of the present invention, and is described in detail as follows:
[0038]...
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Abstract
The invention is applicable to the technical field of semiconductors, and provides a gallium oxide field effect transistor and a preparation method thereof. The gallium oxide field effect transistor comprises a substrate, a gallium oxide channel layer arranged on the substrate, a source electrode and a drain electrode arranged on the gallium oxide channel layer, a gate dielectric layer arranged between the source electrode and the drain electrode, a gate electrode arranged on the gate dielectric layer, and a passivation dielectric layer covering the surface area between the source electrode and the drain electrode, wherein a fluorine injection area is arranged in the passivation dielectric layer, and the fluorine injection area is located in the area, deviating to one side of the drain electrode, of the gate electrode. The gallium oxide field effect transistor provided by the invention can effectively suppress a peak electric field which may occur in a region, close to the drain electrode, of the gate electrode, so that the electric field distribution is more uniform, the breakdown voltage of the gallium oxide field effect transistor is greatly improved, and the application of a gallium oxide field effect transistor device in a high-voltage scene can be expanded.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a gallium oxide field effect transistor and a preparation method thereof. Background technique [0002] At present, ultra-wide bandgap power electronic devices represented by gallium oxide have gradually become an important development field of power semiconductor devices in recent years, and are expected to replace traditional silicon-based power devices in some specific fields. [0003] As a new semiconductor material, ultra-wide bandgap gallium oxide has outstanding advantages in terms of breakdown field strength, Baliga figure of merit and cost. Internationally, Baliga figure of merit is usually used to characterize the degree to which materials are suitable for power devices. For example, β-Ga 2 o 3 The Ballyga value of the material is 4 times that of GaN material, 10 times that of SiC material, and 3444 times that of Si material. β-Ga 2 o 3 Under th...
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IPC IPC(8): H01L23/31H01L29/40H01L29/78H01L21/02H01L21/56H01L21/34
CPCH01L29/78H01L29/66969H01L29/405H01L21/0217H01L21/02321H01L23/3171H01L21/56
Inventor 吕元杰王元刚周幸叶刘宏宇宋旭波梁士雄马春雷付兴昌冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP