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A passivated contact crystalline silicon solar cell and its manufacturing method

A technology of solar cells and manufacturing methods, applied in the field of solar cells, can solve the problems of unclean cleaning of additives, increased cost, and impact on cell efficiency and yield

Active Publication Date: 2021-09-10
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process is complicated, and the cost increases due to the use of additives. At the same time, it will cause a certain pressure on the subsequent pipeline cleaning, and the cleaning of the additives will seriously affect the efficiency and yield of the battery.

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  • A passivated contact crystalline silicon solar cell and its manufacturing method

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Embodiment Construction

[0032] In order to enable those skilled in the art to better understand the solution of the present application, the present application will be further described in detail below in conjunction with the drawings and specific implementation methods. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0033] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed bel...

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Abstract

This application discloses a method for making passivated contact crystalline silicon solar cells: forming a diffusion layer on the front of the silicon wafer; forming an oxide layer on the back of the silicon wafer and the surface of the diffusion layer away from the silicon wafer, and forming an oxide layer on the surface of the oxide layer away from the silicon wafer Form a polysilicon layer; diffuse the polysilicon layer on the back to form a doped polysilicon layer; remove the oxide layer and polysilicon layer on the front with an acid mixture, which includes hydrofluoric acid, nitric acid, and sulfuric acid; layer and the doped glass layer produced when the doped polysilicon layer is formed; the first passivation layer is formed on the surface of the diffusion layer away from the silicon wafer; the second passivation layer is formed on the surface of the doped polysilicon layer away from the silicon wafer; A first electrode is formed on the surface of the first passivation layer away from the diffusion layer, and a second electrode is formed on the surface of the second passivation layer away from the doped polysilicon layer. The method has a simple process, does not require additives, and improves battery efficiency and yield. The present application also provides a battery having the above-mentioned advantages.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular to a passivated contact crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] With the development of the photovoltaic industry, both enterprises and customers have higher and higher requirements for solar cells, and improving the efficiency of solar cells has become a constant goal. The passivation contact structure is composed of a layer of tunneling oxide layer and doped polysilicon layer. The passivation contact solar cell with this structure can significantly reduce the recombination of the metal contact area, and at the same time has good contact performance, which can greatly improve the performance of solar cells. s efficiency. [0003] De-winding plating is a very important step in the production process of passivated contact solar cells. Unclean de-winding plating or over-etching will seriously affect the appearance...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/068H01L31/18
CPCH01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 王东金井升张昕宇
Owner ZHEJIANG JINKO SOLAR CO LTD