Algainp-based light-emitting diode chip and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the light output efficiency of light-emitting diodes, low current injection efficiency, and limited expansion capabilities, so as to achieve good current expansion effects and improve injection efficiency. , reduce the effect of light absorption
Active Publication Date: 2021-06-29
HC SEMITEK SUZHOU
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Problems solved by technology
However, due to the limited current spreading ability of P-GaP, the current density of the P-type current spreading layer near the bottom of the P-type electrode is higher, and the current density of the region farther away from the P-type electrode is lower, which will cause the overall current injection efficiency to be biased. Low, which reduces the light-emitting efficiency of the light-emitting diode
And the thickness of the P-type current spreading layer is usually 2~5um, which is thicker and absorbs light, thereby further reducing the light extraction efficiency of the light emitting diode.
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[0035] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0036] figure 1 It is a schematic structural diagram of an AlGaInP-based light-emitting diode chip provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the AlGaInP-based light-emitting diode chip includes a substrate 1, an N-type electrode 1a disposed on one side of the substrate 1, and an N-type buffer layer 2 and a reflective layer 3 sequentially stacked on the other side of the substrate 1. , N-type confinement layer 4, active layer 5, P-type buffer layer 6, P-type confinement layer 7, P-type current spreading layer 8, ITO transparent conductive layer 9 and P-type electrode 10.
[0037] The ITO transparent conductive layer 9 includes a first sublayer 91 disposed on the P-type current spreading lay...
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Abstract
The disclosure provides an AlGaInP-based light-emitting diode chip and a manufacturing method thereof, which relate to the technical field of semiconductors. The AlGaInP-based light-emitting diode chip includes a P-type current spreading layer and an ITO transparent conductive layer, and the ITO transparent conductive layer includes a first sublayer arranged on the P-type current spreading layer and a second sublayer arranged on the first sublayer, and the second sublayer is arranged on the first sublayer. The work function of the first sublayer is greater than that of the second sublayer, and the carrier concentration of the ITO transparent conductive layer gradually increases along the vertical growth direction of the ITO transparent conductive layer; the P-type current spreading layer is a P-type GaP layer, and the P-type current spreading layer The thickness is 80~100nm. Good ohmic contact can be formed between the ITO transparent conductive layer and the P-type current spreading layer, and the injection efficiency of the current can be improved, so that the thickness of the P-type current spreading layer can be thinned, and the absorption of light by the P-type current spreading layer can be reduced, further Improve the luminous efficiency of LED.
Description
technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to an AlGaInP-based light-emitting diode chip and a manufacturing method thereof. Background technique [0002] Quaternary light emitting diode (English: Light Emiting Diode, referred to as: LED) chip has the advantages of high luminous efficiency, wide color range, low power consumption, long life, monochromatic light, fast response, impact resistance, small size, etc. It is widely used in various indication and display devices. [0003] In the related art, the quaternary system AlGaInP-based LED chip includes a substrate, an N-type electrode arranged on one side of the substrate, and an N-type buffer layer, a reflective layer, and an N-type electrode arranged on the other side of the substrate in sequence. Confinement layer, active layer, P-type buffer layer, P-type confinement layer, P-type current spreading layer, ITO transparent conductive layer and P-type elec...
Claims
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IPC IPC(8): H01L33/14H01L33/42H01L33/30H01L33/00
CPCH01L33/0075H01L33/14H01L33/30H01L33/42
Inventor 肖和平朱迪谭立龙张炳伟邢振远
Owner HC SEMITEK SUZHOU