Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chip structure

A chip structure, chip technology, applied in the direction of instruments, using re-radiation, antenna arrays that are powered separately, etc., can solve the problems of silicon-based technology performance limitation noise figure, increased chip size, low integrity, etc.

Inactive Publication Date: 2020-05-19
ASELSAN ELEKTRONIK SANAYI & TICARET ANONIM SIRKETI
View PDF15 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon-based technologies are limited by certain key RF performance (noise figure, output power, etc.) compared to other semiconductor technologies such as Gallium Arsenide
Although GaAs-based technology has better RF performance, its integrity is lower than Silicon-based technology, which increases chip size to unacceptable levels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chip structure
  • Chip structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] In radar applications, digital circuits and RF circuits need to be used together. To perform multi-channel digital and RF procedures on a single chip, silicone-based structures are often used. However, the overall performance of the single chip structure is limited due to the limited RF performance of the silicone-based structure. Accordingly, the present invention provides chip architectures that implement digital and RF applications.

[0015] figure 1 A perspective view of a chip structure of the present invention is shown. The chip structure comprises at least one gallium-based (eg gallium arsenide-GaAs, gallium nitride-GaN, etc.) first layer (1) for RF applications; at least one gallium-based (eg gallium arsenide-GaAs, gallium nitride Gallium-GaN, etc.) second layer (2) placed on said first layer (1) to perform digital applications; at least two copper layers between the first layer (1) and the second layer (2) The base pillar (3) provides electrical connection...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In the present invention, a chip structure, suitable to be used in radar applications is provided. Said chip structure comprises, at least one gallium based first layer (1) to perform RF applications;at least one gallium based second layer (2), placed on said first layer (1), to perform digital applications; at least two copper based pillars (3) located between the first layer (1) and the secondlayer (2), which provide electrical connection between the first layer (1) and second layer (2) and which ensure that there is a safe distance between the first layer (1) and second layer (2).

Description

technical field [0001] The present invention relates to a chip structure particularly suitable for phased array radar applications. Background technique [0002] Phased array radars consist of multiple receiving and / or transmitting modules and antennas, which must be separated by a certain distance imposed by the wavelength. Depending on the operating frequency band, the distance between modules must be small. In phased-array radar applications, different tasks (such as sending a signal, receiving a signal, processing a signal, etc.) are performed almost simultaneously. Due to the limited space available per microwave module and the high number of assigned tasks, the chips used in the modules need to be small in size. Furthermore, the chip's brittle nature limits the maximum chip size in handling. Most silicone-based semiconductor technologies are compatible with analog, digital, and RF circuits, so it is possible to form a silicone-based compact multi-channel chip with b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01Q21/00H01Q21/06H01Q23/00H01Q3/26
CPCH01L23/66H01L2223/6677H01L23/552H01L25/18H01L2224/13147H01L2924/1421H01L2924/143H01L2224/16145H01L2225/06513H01L2924/1033H01L2924/10329H01L24/16H01L2224/14152G01S7/028H01L2924/00014G01S7/032G01S13/02G01S2013/0245H01L23/481H01L23/528H01L23/53228H01L29/20H01L2223/6616
Inventor 阿赫迈特·阿克塔格穆拉特·埃达尔·达格德伦
Owner ASELSAN ELEKTRONIK SANAYI & TICARET ANONIM SIRKETI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products