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Electric pumping quantum dot single-photon source and preparation method thereof

A single-photon source and quantum dot technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low luminous efficiency, poor practicability and portability of quantum dot single-photon sources, and alleviate the problems of practicability and portability. Poor, improve practicability and portability, enhance the effect of quantum dot luminescence

Active Publication Date: 2020-05-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of the above-mentioned technical problems, the object of the present invention is to provide an electrically pumped quantum dot single photon source and its preparation method to alleviate the poor practicability and portability of the optically pumped quantum dot single photon source existing in the prior art. , and the technical problem of low luminous efficiency of quantum dot single photon source

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  • Electric pumping quantum dot single-photon source and preparation method thereof
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  • Electric pumping quantum dot single-photon source and preparation method thereof

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[0044] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. the embodiment. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0045] The quantum dots used at this stage are mainly prepared by two methods, one is epitaxial quantum dots grown by physical methods, and the other is colloidal quantum dots synthesized by wet chemical methods. Epitaxial quantum dots obtained through the Stranski-Krastanov self-organized growth mode are now used as light sources in ultrafast semiconductor lasers and optical amplifi...

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Abstract

The invention provides an electric pumping quantum dot single-photon source and a preparation method thereof. The method comprises the steps of S101, preparing an III-V group compound quantum well light-emitting chip; S102, manufacturing a metal hole in the III-V group compound quantum well light-emitting chip; and S103, introducing quantum dots to the surface of the chip prepared in the step S102to complete device fabrication. According to the electric pumping quantum dot single-photon source and the preparation method thereof, the technical problems that an optical pumping quantum dot single-photon source in the prior art is poor in practicability and portability and that the quantum dot single-photon source is low in light emitting efficiency are relieved, and the technical effects ofimproving the practicability and portability of the single-photon source and improving the light emitting efficiency of the quantum dot single-photon source are achieved.

Description

technical field [0001] The invention relates to the technical field of single photon sources, in particular to an electrically pumped quantum dot single photon source and a preparation method thereof. Background technique [0002] In recent years, single photon source (SPS) technology has made breakthroughs in the field of quantum information, and it has active performance in quantum communication, quantum computing, quantum lithography and quantum cryptography. Especially in quantum cryptography, now, not only is quantum key distribution (QKD) theoretically proven possible, but QKD has been developed in many ways since the original proposal in 1984 and the first experiments in 1992 confirmed. Due to the advantages of strong confidentiality, good security and fast running speed in quantum computers, quantum communication has attracted widespread attention. In order to ensure that quantum information is not leaked during communication, the ideal single photon source for qua...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/50
CPCH01L33/06H01L33/502H01L2933/0041
Inventor 许兴胜靳思玥秦璐
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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