Modified film-forming resin containing acid inhibitor and preparation method thereof and photoresist composition

A technology of film-forming resin and acid inhibitor, which is applied in the direction of photosensitive materials, optics, and opto-mechanical equipment used in optomechanical equipment, and can solve the problem of poor film-forming ability of photoresist, mismatch of mutual solubility, photoresist film Brittle cracks and other problems, to achieve the effect of good film forming ability, stable photolithography performance, improved resolution and line width roughness

Inactive Publication Date: 2020-05-29
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, provide a kind of modified film-forming resin containing acid inhibitor and its preparation method and application thereof, to solve the gap between existing acid diffusion inhibitor and polymer compound The mismatch of mutual solubility between them leads to poor film-forming ability of photoresist, and technical problems such as brittle cracking and peeling of photoresist film

Method used

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  • Modified film-forming resin containing acid inhibitor and preparation method thereof and photoresist composition
  • Modified film-forming resin containing acid inhibitor and preparation method thereof and photoresist composition
  • Modified film-forming resin containing acid inhibitor and preparation method thereof and photoresist composition

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preparation example Construction

[0061] On the other hand, based on the modified film-forming resin described above, the embodiment of the present invention also provides a preparation method of the modified film-forming resin. Described modified film-forming resin preparation method technological process is as figure 1 As shown, it includes the following steps:

[0062] S01. Under a protective atmosphere, after dissolving the film-forming resin monomer and the acid inhibitor monomer in the reaction solvent, adding an initiator solution to carry out a polymerization reaction to obtain a reactant solution;

[0063] S02. Adding a precipitation solvent to the reactant solution to cause precipitation of the reactant in the reactant solution, leaving the precipitate and separating the solution for treatment, and purifying the precipitate.

[0064] Wherein, the film-forming resin monomer and the acid inhibitor monomer in step S01 are the same as the film-forming resin monomer and the acid inhibitor monomer describ...

Embodiment 1-1

[0080] This embodiment provides a modified film-forming resin containing an acid inhibitor and a preparation method thereof. The modified film-forming resin is formed by polymerizing film-forming resin monomers and acid inhibitor monomers. Specifically, the reaction formula and specific structural formula of the modified film-forming resin containing acid inhibitor are as follows:

[0081]

[0082] The preparation method of the modified film-forming resin containing acid inhibitor comprises the steps of:

[0083] (1) 30g of polar film-forming resin monomer M1, 50g of acid protection monomer M2, 19.35g of non-polar film-forming resin monomer M3 and 0.65g of acid-inhibiting monomer 1 are added into a reactor full of nitrogen, and Add 100g of the first tetrahydrofuran into the reaction kettle, stir the reaction kettle to 66° C., then add dropwise (dropping time is 10min) a mixture of 20g of the second tetrahydrofuran and 2g of benzoyl peroxide into the reaction kettle. The m...

Embodiment 1-2

[0087] This embodiment provides a modified film-forming resin containing an acid inhibitor and a preparation method thereof. The modified film-forming resin is polymerized from film-forming resin monomers, acid inhibitor monomers and hydroxyl-containing monomers. Specifically, the reaction formula and specific structural formula of the modified film-forming resin containing acid inhibitor are as follows:

[0088]

[0089] The preparation method of the modified film-forming resin containing acid inhibitor comprises the steps of:

[0090] (1) 30g of polar film-forming resin monomer M1, 50g of acid-protected monomer M2, 19.20g of non-polar film-forming resin monomer M3, 0.65g of acid-inhibiting monomer 1 and 0.15g of hydroxyl-containing monomer 376 were added In the reaction kettle filled with nitrogen, add 100g of the first ethyl acetate into the reaction kettle, stir the reaction kettle to 77°C, and then drop the second ethyl acetate into the reaction kettle (dropping time ...

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Abstract

The invention discloses modified film-forming resin containing an acid inhibitor and a preparation method and application thereof. The modified film-forming resin is formed by polymerizing a film-forming resin monomer and an acid inhibitor monomer. The modified film-forming resin comprises a film-forming functional group and an acid inhibitor functional group, so that the modified film-forming resin can be used as main resin, and has an acid inhibition effect. The invention also provides a preparation method of the modified film-forming resin and a photoresist composition of the modified film-forming resin. When the modified film-forming resin is applied to a photoresist composition, the components contained in the photoresist composition are uniformly dispersed, so that the stable photoetching performance of the photoresist can be ensured, the resolution and line width roughness of the photoresist are effectively ensured and improved, the film-forming ability is good, and the undesirable phenomena of embrittlement, peeling and the like of a photoresist film are effectively avoided.

Description

technical field [0001] The invention belongs to the technical field of polymers, and in particular relates to a modified film-forming resin containing an acid inhibitor, a preparation method thereof, and a photoresist composition. Background technique [0002] The three important parameters of photoresist include resolution, sensitivity and line width roughness, which determine the process window of photoresist in chip manufacturing. As the performance of semiconductor chips continues to improve, the integration level of integrated circuits increases exponentially, and the graphics in integrated circuits continue to shrink. In order to make smaller-sized patterns, the above three performance indicators of the photoresist must be improved. According to the Rayleigh equation, the use of a short-wavelength light source in the photolithography process can improve the resolution of the photoresist. The light source wavelength of the photolithography process has developed from 3...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F220/18C08F220/32C08F220/34C08F220/20G03F7/004
CPCC08F220/18G03F7/004C08F220/32C08F220/34C08F220/20G03F7/0397G03F7/0045G03F7/0392C08F220/1811G03F7/038G03F7/039
Inventor 顾大公齐国强余绍山陈玲方涛毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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