Manufacturing method of conductive interconnection line

Abstract

The invention provides a manufacturing method of a conductive interconnection line. The method comprises the steps: forming a second interlayer dielectric layer and a patterned photoresist layer on afirst interlayer dielectric layer with a conductive plug, taking the patterned photoresist layer as a mask, and carrying out etching to remove a part of the second interlayer dielectric layer at a certain thickness so as to form a corresponding first groove; then, removing the patterned photoresist layer, and forming a hard mask layer used for filling the first groove, wherein the hard mask layeris embedded in the second interlayer dielectric layer and can define interval areas between the conductive interconnection lines; then, etching the second interlayer dielectric layer by taking the hard mask layer as a mask to form a second groove; and finally, forming the conductive interconnection line which is filled in the second groove and is in contact with a top of the corresponding conductive plug. According to the scheme, a width of the gap between the formed conductive interconnection lines can be accurately and effectively controlled through the hard mask layer, and a problem of bridging of the conductive interconnection lines is avoided.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for manufacturing conductive interconnection lines. Background technique [0002] In the back-end process (Back End of Line, BEOL) of semiconductor devices, it is necessary to form several layers of metal interconnection lines and contact plugs between metal interconnection lines of different layers on the semiconductor device layer, so that the semiconductor The electrodes of the device are drawn out. With the continuous development of semiconductor technology, the critical dimension (CD) of semiconductor devices continues to shrink, the metal interconnection lines become thinner, and the gaps between the metal interconnection lines become smaller and smaller. When the photoresist used to define the metal interconnection line is exposed, if the photoresist line is relatively thin and the area of ​​the light-transmitting area around it is relati...

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a method of manufacturing conductive interconnection wires to solve the problem of bridging between conductive interconnection wires

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