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RC-IGBT device structure capable of eliminating negative resistance effect

A technology of device structure and negative resistance effect, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of device reliability and performance hazards, and achieve the purpose of suppressing the Snapback effect, increasing the motion path, and easy to open. Effect

Active Publication Date: 2020-05-29
HANGZHOU DIANZI UNIV
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Problems solved by technology

[0004] The main purpose of the present invention is to provide an RC-IGBT device structure that eliminates the negative resistance effect, so as to solve the problem of the snapback phenomenon of the RC-IGBT in the prior art at the initial stage of forward conduction, thereby causing harm to the reliability and performance of the device. question

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  • RC-IGBT device structure capable of eliminating negative resistance effect
  • RC-IGBT device structure capable of eliminating negative resistance effect
  • RC-IGBT device structure capable of eliminating negative resistance effect

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Embodiment Construction

[0016] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] Traditional RC-IGBT structure such as figure 1 As shown, the RC-IGBT semi-cellular structure proposed by the present invention is as follows figure 2 As shown, compared with the traditional RC-IGBT, the difference of the RC-IGBT proposed by the present invention is that a mixed P+ / N-buffer layer is introduced at the inner bottom of the N-type drift region, such as Figure 3-6 As shown, the specific fabrication steps of the back structure are as follows:

[0018] 1. Select 1200V RC-IGBT device, the width of a single mos cell is 10 μm, the width of the half collector is 10 μm, and the thickness is 130 μm; the concentration in the drift region is 5.0×10 13 cm -3 , the thickness of the gate oxide layer is 0.05 μm;

[0019] 2. Form the bottom of the N-drift region...

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Abstract

The invention provides an RC-IGBT device capable of eliminating a negative resistance effect. Compared with a traditional device, the RC-IGBT device is characterized in that N type and P+ type bufferlayers are alternately arranged on an N type collector region and a P type collector region in a mixed manner, and the edge of a P+ column closest to the N type collector region exceeds the N type buffer layers. The N type buffer layers and the P type buffer layers which are arranged alternately in a mixed manner have an isolation effect on multiple sections of a field stop region; electrons or holes need to climb over a plurality of P type regions, so that the movement path of carriers is prolonged, and therefore, the potential difference of the RC-IGBT device above the N type collector region at the initial stage of conduction is increased, a PN junction is easier to turn on, the device is easier to convert from single-pole conduction to double-pole conduction, and the Snapback effect generated by the RC-IGBT device at the initial stage of the conduction is suppressed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an RC-IGBT device structure for eliminating the negative resistance effect. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a power semiconductor device that integrates MOS (insulated gate field effect transistor) control and bipolar conduction BJT (bipolar transistor). Compared with traditional VDMOS devices, IGBT It has conductance modulation and is a bipolar device. It has the advantages of high input impedance, low control power, simple drive circuit, high switching speed and low switching loss of MOSFET, and has the advantages of high current density, low saturation voltage and strong current handling capacity of bipolar power transistor. [0003] In a power electronic system, an IGBT usually needs to be used in conjunction with an antiparallel fast recovery diode (Fast Recovery Diode, referred to as FRD). Therefore, the reverse conduction ...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/7393H01L29/0603H01L29/0684H01L29/66325
Inventor 王颖张孝冬于成浩曹菲
Owner HANGZHOU DIANZI UNIV
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