RC-IGBT chip and manufacturing method thereof

A manufacturing method and chip technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the reverse recovery characteristics of diodes cannot be fully reduced, and achieve the effect of good reverse recovery characteristics

Active Publication Date: 2020-05-29
上海擎茂微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the adjustable process window of the P-type base region is very small, it is often difficult to optimize the selection of the doping concentration of the P-type base region, so as to ensure the performance of static parameters such as th

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  • RC-IGBT chip and manufacturing method thereof
  • RC-IGBT chip and manufacturing method thereof
  • RC-IGBT chip and manufacturing method thereof

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Embodiment Construction

[0030] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0031] see Figure 1 to Figure 3, the RC-IGBT chip of a preferred embodiment of the present invention includes an IGBT region and an FRD region, and both the IGBT region and the FRD region include an N-type drift region formed by a semiconductor substrate 100, an N-type field stop located on the back of the N-type drift region region 210 and the collector 5 located below the N-type field termination region, a P-type collector region 220 is provided between the N-type field termination region and the collector in the IGBT region, and a P-type collector region 220 is provided between the N-type field termination region and the collector in the FRD region. An N-type collecto...

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Abstract

The invention relates to an RC-IGBT chip. The RC-IGBT chip comprises an IGBT region and an FRD region; the IGBT region and the FRD region each comprise a P type base region and a contact region; the thickness and doping concentration of the P type base region in the IGBT region are larger than those of the P type base region in the FRD region, so that the reverse recovery characteristic of the RC-IGBT chip is improved. Meanwhile, the doping concentration of the contact region in the IGBT region is greater than the doping concentration of the contact region in the FRD region, and therefore, thereduction of the reverse recovery current and reverse recovery loss of a diode can be facilitated, and the robustness of the device can be improved. The invention also relates to a manufacturing method of the RC-IGBT chip.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to an RC-IGBT chip, and furthermore, the invention also relates to a manufacturing method of the RC-IGBT chip. Background technique [0002] RC-IGBT is a semiconductor device that integrates the freewheeling diode FRD inside the IGBT device. Existing RC-IGBT devices usually use one ion implantation to simultaneously form the IGBT region and the P-type base region of the FRD region. The peak concentration of the P-type base region along the effective conduction channel in the IGBT region determines its threshold voltage. At the same time, the concentration of the P-type base region must match the withstand voltage condition of the cell region. Therefore, the adjustable process window of the P-type base region is often very small. In the diode region, when the withstand voltage condition is met, the smaller the doping concentration of the P-type base region, the better the reverse recovery...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L21/265H01L21/331
CPCH01L29/66348H01L29/7397H01L21/26513
Inventor 阳平
Owner 上海擎茂微电子科技有限公司
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