A kind of ultra-low vf soft fast recovery diode

A recovery diode, soft and fast technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low forward voltage recovery time, large reverse leakage current, high reverse voltage, etc., and achieve small reverse recovery time , Reduce the forward conduction voltage drop, the effect of soft reverse recovery characteristics

Active Publication Date: 2022-03-08
深圳吉华微特电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Schottky barrier diodes have the advantages of forward voltage drop and extremely small recovery time, but for silicon-based SBD barriers, they are generally limited to low-voltage products of 200V and below, and it is difficult to achieve very high reverse voltages. Widely used in low voltage circuits
And because of the Schottky barrier, the reverse leakage current is often very large, especially low barrier products, which are also extremely sensitive to temperature, and the high temperature leakage often reaches mA level, which limits the use of SBD diodes in circuits

Method used

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  • A kind of ultra-low vf soft fast recovery diode
  • A kind of ultra-low vf soft fast recovery diode
  • A kind of ultra-low vf soft fast recovery diode

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Embodiment Construction

[0034] The invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] Such as Figure 1-6 , The present invention is an ultra soft VF schematic form a fast recovery diode, it can be seen that top to bottom: a first metal electrode 10, oxide layer 20, a Schottky barrier 30, P + P- well 40 and the ring 50, N- high resistance layer 60, N + substrate layer 70, a second metal electrode 80, wherein the Schottky barrier 30 covers the non-active region of the P- well region, said Shaw Schottky barrier source area 30 occupied 4 / 6-5 / 6, the P- well region 50 source area occupancy 1 / 6-2 / 6. The area ratio and the setting, in addition to the active region outside the P- well 50, the additional Schottky barrier island 30 is formed, constituting the P- well in the active region 50 and Schottky barrier 30 is present in alternate parallel configuration, and combines the advantages of diode SBD FRD diodes. When the chip is subjec...

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Abstract

The invention discloses an ultra-low VF soft and fast recovery diode and a manufacturing method thereof. The ultra-low VF soft and fast recovery diode is as follows from top to bottom: a first metal electrode, an oxide layer, a Schottky barrier, a P+ ring and a P - well, N-high resistance layer, N+ substrate layer, second metal electrode, wherein, the Schottky barrier covers the non-P-well area of ​​the active region, and the Schottky barrier occupies 10% of the area of ​​the source region 4 / 6-5 / 6, the P-well occupies 1 / 6-2 / 6 of the area of ​​the source region. It forms a new type of diode by combining SBD diodes and PIN diodes. On the basis of PIN diodes, an additional small island of Schottky barrier is added in the active area, and a P-well area and Schottky barrier are formed in the active area. The parallel structure in which base barriers exist alternately combines the advantages of SBD diodes and FRD (Fast Recovery Diode) diodes, with low forward voltage and excellent soft and fast recovery parameters.

Description

Technical field [0001] The present invention relates to a soft fast recovery diode technology, and particularly relates to an ultra soft VF fast recovery diode and a manufacturing method. Background technique [0002] Conventional fast recovery diode are PIN diode structure mainly by heavy metal impurities doped Pt, Au or the like by electron irradiation to effect adjustment of the reverse recovery time, fast recovery purposes. Classification by voltage, current mainstream design and technology platforms, including 100V, 200V, 300V, 400V, 600V, 800V, 1200V, 1700V, 3300V, 4500V voltage and a dozen platforms. According to customer demand, according to the speed of recovery can generally be divided into conventional fast recovery, fast recovery, fast recovery categories. Fast recovery diode conventional design and technology platform, it is difficult to achieve a soft and fast recovery of both low forward voltage drop, usually need to choose between two kinds of parameters, in parti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/868H01L29/66
CPCH01L29/868H01L29/6609
Inventor 李环伟田旭雷正龙许冬梅孙亚倩卢昂
Owner 深圳吉华微特电子有限公司
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