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A waveguide type photodetector and its manufacturing method

A technology of photodetector and manufacturing method, which is applied in photovoltaic power generation, semiconductor device, final product manufacturing, etc., can solve the problems of decreased absorption coefficient and the inability of Ge detectors to meet short-wave infrared applications, so as to improve transmission efficiency and improve light detection. The effect of efficiency

Active Publication Date: 2022-03-01
SHANGHAI IND U TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the wavelength of Ge material is greater than 1.55um, the absorption coefficient drops sharply, which makes Ge detectors unable to meet the applications of short-wave infrared and even mid-infrared

Method used

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  • A waveguide type photodetector and its manufacturing method
  • A waveguide type photodetector and its manufacturing method
  • A waveguide type photodetector and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] An embodiment of the present application provides a waveguide photodetector.

[0040] figure 1 It is a three-dimensional schematic diagram of the waveguide photodetector of the present embodiment, figure 2 yes figure 1 A schematic cross-sectional view viewed in the A-A' direction of .

[0041] Such as figure 1 and figure 2 As shown, the waveguide photodetector 1 includes:

[0042] The first insulating layer 12 located on the surface of the substrate 11; the lower contact layer 13 located on the surface of the first insulating layer 12; the photoelectric conversion layer 14 located on the surface of the lower contact layer 13, the material of the photoelectric conversion layer 14 includes germanium (Ge); The upper contact layer 15 on the surface of the photoelectric conversion layer 14; the silicon nitride waveguide 16 formed above the first insulating layer 12, the silicon nitride (SiN) waveguide 16 extends in a lateral direction parallel to the surface of the su...

Embodiment 2

[0060] Embodiment 2 provides a method for manufacturing a waveguide photodetector, which is used to manufacture the waveguide photodetector described in Embodiment 1.

[0061] image 3 is a schematic diagram of the manufacturing method of the waveguide photodetector of the present embodiment, such as image 3 As shown, in this embodiment, the manufacturing method may include:

[0062] Step 301, forming a lower contact material layer 13a on the surface of the first insulating layer 12 on the surface of the substrate 11;

[0063] Step 302, forming a photoelectric conversion layer 14 on the surface of the lower contact material layer 13a, and forming an upper contact layer 15 on the surface of the photoelectric conversion layer 14, wherein the material of the photoelectric conversion layer 14 includes germanium (Ge);

[0064] Step 303, etching the lower contact material layer 13a to form the lower contact layer 13;

[0065] Step 304, forming a second insulating layer 17 surrou...

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Abstract

The present application provides a waveguide photodetector and a manufacturing method thereof. The waveguide photodetector includes: a first insulating layer located on the surface of a substrate; a lower contact layer located on the surface of the first insulating layer; a photoelectric conversion layer on the surface of the contact layer, the material of the photoelectric conversion layer includes germanium (Ge); an upper contact layer located on the surface of the photoelectric conversion layer; and a silicon nitride waveguide formed above the first insulating layer, the The silicon nitride waveguide extends in a lateral direction parallel to the surface of the substrate, and, in the lateral direction, one end of the silicon nitride waveguide is connected to the photoelectric conversion layer, and the silicon nitride waveguide The transmitted light is incident on the photoelectric conversion layer, and generates photocurrent in the photoelectric conversion layer. According to this embodiment, the waveguide is formed of SiN, so the transmission efficiency of light can be improved; and the SiN waveguide is coupled with the end face of the photoelectric conversion layer, so that the light detection efficiency can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a waveguide photodetector and a manufacturing method thereof. Background technique [0002] Silicon (Si)-based photodetectors, especially silicon-based germanium photodetectors, are widely used in the fields of optical communication, optical interconnection, and optical sensing because they are compatible with CMOS processes and easy to integrate. According to the direction of light entering, detectors can be divided into vertical incidence detectors and waveguide detectors. Compared with the vertical incidence detector, the waveguide detector can avoid the mutual restriction between the optical detector speed and quantum efficiency, and can be integrated with the waveguide optical path, which is easier to achieve high speed and high responsivity. One of the core devices of the chip. [0003] Compared with the traditional III-V and II-V infrared photodetectors,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/028H01L31/105H01L31/109H01L31/18
CPCH01L31/109H01L31/105H01L31/1804H01L31/02327H01L31/028H01L31/18H01L31/0232Y02E10/547Y02P70/50
Inventor 汪巍方青余明斌
Owner SHANGHAI IND U TECH RES INST