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Cr-doped In2S3 intermediate band material and preparation method thereof

A cr-in2s3, intermediate band technology, applied in chemical instruments and methods, gallium/indium/thallium compounds, final product manufacturing, etc., can solve problems such as analysis, discussion and preparation methods, to broaden spectral response, reduce photogenerated electron-space Acupoint pair recombination, reducing the effect of light reflection intensity

Active Publication Date: 2020-06-05
鄂尔多斯应用技术学院
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no author has analyzed and discussed Cr-doped In theoretically and experimentally. 2 S 3 Material preparation method

Method used

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  • Cr-doped In2S3 intermediate band material and preparation method thereof
  • Cr-doped In2S3 intermediate band material and preparation method thereof
  • Cr-doped In2S3 intermediate band material and preparation method thereof

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Embodiment 1

[0052] For the preparation process, please refer to figure 1 , a Cr-doped In of this embodiment 2 S 3 The preparation method of intermediate zone material, its method step is as follows:

[0053] Step 1: Preparation of In 2 S 3 Material, 99.99% pure; weighs 10 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0054] Step 2: Preparation of Cr 2 S 3 Material, 99.99% pure; weighs 0.3234 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0055] Step 3: Put In 2 S 3 and Cr 2 S 3 The mixed material is put into the tank body of the mixer, the rotating speed of the mixer is 20r / min, the mixing time is 10h, the inert gas argon protection is passed into, and then the mixer is used for mixing; the mixed powder is obtained; In 2 S 3 and Cr 2 S 3 The mixed powder samples were put into a vacuum ball mill jar.

[00...

Embodiment 2

[0061] For the preparation process, please refer to figure 1 , a Cr-doped In of this embodiment 2 S 3 The preparation method of intermediate zone material, its method step is as follows:

[0062] Step 1: Preparation of In 2 S 3 Material, 99.99% pure; weighs 100 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0063] Step 2: Preparation of Cr 2 S 3 Material, 99.99% pure; weighs 3.33 grams. Weighing adopts the electronic balance scale of model BSA124S-CW produced by Sai Duo Kesi Scientific Instrument Co., Ltd.

[0064] Step 3: Put In 2 S 3 and Cr 2 S 3 The mixed material is put into the tank body of the mixer, the rotating speed of the mixer is 50r / min, and the mixing time is 20h, and the inert gas nitrogen protection is passed into, and then the mixer is used for mixing; the mixed powder is obtained; the obtained In 2 S 3 and Cr 2 S 3 The mixed powder samples were put into a vacuu...

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Abstract

The invention discloses a preparation method of a Cr-doped In2S3 intermediate band material. The preparation method comprises the following steps: firstly, weighing In2S3 and Cr2S3 powder samples, putting the In2S3 and Cr2S3 powder samples into a ball milling tank; then adding anhydrous ethanol into the ball milling tank, sealing the ball milling tank, then putting the ball milling tank into a ball mill, carrying out ball milling; taking out the ball-milled sample, putting the sample into a centrifugal tube, carrying out a centrifugal treatment, pouring out upper-layer anhydrous ethanol in thecentrifuged sample, drying, taking out, manually grinding, putting the powder into an annealing furnace, and annealing to obtain the Cr-In2S3 intermediate band material. The preparation method is simple, the Cr-In2S3 light absorption layer material is prepared through combination of a ball milling method and an annealing treatment, all elements in the structure meet the stoichiometric ratio, composition elements are uniformly distributed, and the light reflection intensity is low, thus the light absorption intensity is high, photon-generated carriers in an infrared region can be absorbed, andphoton-generated electron-hole pair combination is reduced.

Description

technical field [0001] The invention relates to an intermediate band absorbing layer material in the field of solar cells, specifically a Cr-doped In 2 S 3 intermediate zone material and its preparation method. Background technique [0002] In 2 S 3 It has different phases due to different ambient temperatures. The advantages of this compound are non-toxic, good stability, and superior photoelectric properties. In 2 S 3 It is widely used in the degradation of organic pollutants under standard light, photocatalysis and preparation of solar cells, etc. It is suitable for the preparation of IBSC absorption layer, and is a promising intermediate-band photoelectric absorption material. [0003] to In 2 S 3 There have been some reports on the theoretical and experimental studies on impurity intermediate band materials as the matrix. For example, the existing research team used the spin-optimized density functional theory under the generalized gradient approximation to calc...

Claims

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Application Information

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IPC IPC(8): C01G15/00H01L31/032H01L31/18
CPCC01G15/00H01L31/0321H01L31/18C01P2002/72C01P2002/82C01P2002/85C01P2002/84C01P2004/03Y02P70/50
Inventor 姚海燕范文亮周晓娟
Owner 鄂尔多斯应用技术学院
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