Preparation method of electrode of transcranial electric stimulator
An electrical stimulation and electrode technology, applied in the field of medical devices, can solve the problems that the accuracy and practical life of electrodes need to be improved, reduce the excitability of neuron cells, etc., and achieve the effects of improving binding reliability, low cost, and simple manufacturing process.
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Embodiment 1
[0020] A preparation method of electrodes of a transcranial electrical stimulator, the steps of which are as follows:
[0021] S1, electroplating 0.1 micron platinum on the surface of the metal thermistor substrate, then rinse the electrode substrate and then dry it; the electrode substrate is rinsed with distilled water for 10 minutes, the drying temperature is 120 degrees Celsius, and the drying time is 20 minutes;
[0022] S2. Pass the electrode substrate base through a sputtering apparatus to sputter a titanium metal layer of 1 mm; then sputter a copper oxide layer with a thickness of 0.1 microns on the titanium metal layer; the sputtering apparatus adopts a high vacuum ion sputtering apparatus, which Vacuum is 10 -4 Pa, filled with argon at a pressure of 60 -1 Pa;
[0023] S3, uniformly dispersing the silver nanowires in ethanol to obtain a silver nanowire dispersion; then dropwise adding the silver nanowires dispersion on a hydrophilic substrate, heating at 60° C. for ...
Embodiment 2
[0026] A preparation method of electrodes of a transcranial electrical stimulator, the steps of which are as follows:
[0027] S1. Electroplate 0.5 micron platinum on the surface of the electrode substrate, then rinse the electrode substrate and then dry it; the electrode substrate is rinsed with distilled water for 10 minutes, the drying temperature is 120 degrees Celsius, and the drying time is 20 minutes
[0028] S2. Pass the electrode substrate base through a sputtering apparatus to sputter a titanium metal layer of 2 mm; then sputter a copper oxide layer with a thickness of 0.5 microns on the titanium metal layer; the sputtering apparatus adopts a high-vacuum ion sputtering apparatus. Vacuum is 10 -4 Pa, filled with argon at a pressure of 60 -1 Pa;
[0029] S3, uniformly dispersing the silver nanowires in ethanol to obtain a silver nanowire dispersion; then dropwise adding the silver nanowire dispersion on a hydrophilic substrate, heating at 80° C. for 25 minutes to obt...
Embodiment 3
[0032] S1, electroplating 1 micron platinum on the surface of the metal thermistor substrate, then rinse the electrode substrate and dry it; the electrode substrate is rinsed with distilled water for 10 minutes, the drying temperature is 120 degrees Celsius, and the drying time is 20 minutes;
[0033] S2. Pass the electrode substrate base through a sputtering apparatus to sputter a titanium metal layer of 3 mm; then sputter a copper oxide layer with a thickness of 1 micron on the titanium metal layer; the sputtering apparatus adopts a high-vacuum ion sputtering apparatus. Vacuum is 10 -4 Pa, filled with argon at a pressure of 60 -1 Pa;
[0034] S3, uniformly dispersing the silver nanowires in ethanol to obtain a silver nanowire dispersion; then dropwise adding the silver nanowire dispersion on a hydrophilic substrate, heating at 100° C. for 30 minutes, to obtain a silver nanowire network structure ;
[0035] S4, place the electrode substrate on the silver nanowire network s...
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