Method for manufacturing cell distribution analyzer
A technology for analyzing devices and cells, applied in the field of biomedicine, can solve the problems of time-consuming, expensive flow cytometer and high cost
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Embodiment 1
[0035] The manufacturing method of the cell distribution analysis device of the present invention comprises the following steps:
[0036] Silicon wafer cleaning: first put the silicon wafer into a solution of concentrated sulfuric acid and hydrogen peroxide (4:1) in a glass vessel and heat it to 80°C for 30 minutes, then take out the silicon wafer and wash it with deionized water for 3 minutes; configure 1:80 BOE (Oxide etching buffer) silicon oxide etching solution, put the silicon wafer into the BOE solution and etch for 1 minute to remove the silicon oxide on the surface; remove the silicon wafer and wash it in deionized water for 3 minutes; use a nitrogen gun to clean the silicon wafer blow dry.
[0037] Silicon wafer etching: Spin-coat photoresist S1803 on the cleaned silicon wafer, spin-coat at 2000 rpm, bake at 80°C for 3 minutes, and then use the UV exposure machine and the designed photolithography plate to test the photoresist S1803 on the silicon wafer. The photore...
Embodiment 2
[0041] The manufacturing method of the cell distribution analysis device of the present invention comprises the following steps:
[0042] Silicon wafer cleaning: first put the silicon wafer into concentrated sulfuric acid and hydrogen peroxide solution in a glass container and heat it to 120 ° C for 10 minutes, then take out the silicon wafer and wash it with deionized water for 10 minutes; configure 1:120 BOE (oxide etching buffer solution) silicon oxide etching solution, put the silicon wafer into the BOE solution and etch for 3 minutes to remove the silicon oxide on the surface; remove the silicon wafer and wash it in deionized water for 10 minutes; dry the silicon wafer with a nitrogen gun.
[0043] Silicon wafer etching: Spin-coat photoresist on the cleaned silicon wafer at a spin-coating speed of 4000 rpm, bake at 110°C for 1 minute, and then use a UV exposure machine and a designed photoresist plate to illuminate the photoresist on the silicon wafer. The resist is expos...
Embodiment 3
[0047] The manufacturing method of the cell distribution analysis device of the present invention comprises the following steps:
[0048] Silicon wafer cleaning: first put the silicon wafer into a concentrated sulfuric acid and hydrogen peroxide (4:1) solution in a glass vessel and heat it to 100°C for 20 minutes, then take out the silicon wafer and wash it with deionized water for 5 minutes; configure 1:100 BOE (Oxide etching buffer) silicon oxide etching solution, put the silicon wafer into the BOE solution and etch for 1 minute to remove the silicon oxide on the surface; remove the silicon wafer and wash it in deionized water for 5 minutes; use a nitrogen gun to clean the silicon wafer blow dry.
[0049] Silicon wafer etching: Spin-coat photoresist S1803 on the cleaned silicon wafer, spin coating at 3000 rpm, bake at 95°C for 1 minute, and then use a UV exposure machine and a designed photolithography plate to process the photoresist S1803 on the silicon wafer. The photore...
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Abstract
Description
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Application Information
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