Anti-ultraviolet radiation thin film material and anti-ultraviolet radiation thin film for optoelectronic device and preparation method of anti-ultraviolet radiation thin film

A technology for anti-ultraviolet radiation and optoelectronic devices, which is applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of insufficient stability and lasting thickness of anti-ultraviolet radiation films, improve the efficiency of anti-ultraviolet radiation, increase the distribution range and quantity, The effect of improving yield

Inactive Publication Date: 2020-06-16
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to: aim at the problems that the anti-ultraviolet radiation film in the prior art is not stable enough and durable and has a large thickness

Method used

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  • Anti-ultraviolet radiation thin film material and anti-ultraviolet radiation thin film for optoelectronic device and preparation method of anti-ultraviolet radiation thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The anti-ultraviolet radiation film material that can be used in optoelectronic devices, the composition is as follows:

[0039] Mixed solvent 60%,

[0040] UV protection agent 25%,

[0041] Porous Protectant 15%,

[0042] Wherein, the mixed solvent is a mixture of 35% ethylene glycol, 35% polymer polyelectrolyte type 731 dispersant, 15% silane coupling agent YGO-1204 and 15% of 20% water-based acrylic resin emulsion, and the anti-ultraviolet radiation agent is 30% A mixture of % weathering wood oil solution and 70% glycerin, the porous protective agent is nanoporous SiO with ethylene glycol as solvent 2 Granular, nanoporous SiO 2 The mass / volume ratio of particles and ethylene glycol is 40g / mL, and the nanoporous SiO 2 The particle size of the particles is 20-50 nm.

[0043] The preparation method of the anti-ultraviolet radiation film that can be used for optoelectronic device is as follows:

[0044] (1) First clean the optoelectronic device or the surface substra...

Embodiment 2

[0048] The anti-ultraviolet radiation film material that can be used in optoelectronic devices, the composition is as follows:

[0049] Mixed solvent 57%,

[0050] UV protection agent 28%,

[0051] Porous Protectant 15%,

[0052] Wherein, the mixed solvent is a mixture of 35% ethylene glycol, 35% polymer polyelectrolyte type 731 dispersant, 15% silane coupling agent YGO-1204 and 15% of 20% water-based acrylic resin emulsion, and the anti-ultraviolet radiation agent is 30% A mixture of % weathering wood oil solution and 70% glycerin, the porous protective agent is nanoporous SiO with ethylene glycol as solvent 2 Granular, nanoporous SiO 2 The mass / volume ratio of particles and ethylene glycol is 40g / mL, and the nanoporous SiO 2 The particle size of the particles is 20-50 nm.

[0053] The preparation method of the anti-ultraviolet radiation film that can be used for optoelectronic device is as follows:

[0054] (1) First clean the optoelectronic device or the surface subst...

Embodiment 3

[0058] The anti-ultraviolet radiation film material that can be used in optoelectronic devices, the composition is as follows:

[0059] Mixed solvent 55%,

[0060] UV protection agent 30%,

[0061] Porous Protectant 15%,

[0062] Wherein, the mixed solvent is a mixture of 35% ethylene glycol, 35% polymer polyelectrolyte type 731 dispersant, 15% silane coupling agent YGO-1204 and 15% of 20% water-based acrylic resin emulsion, and the anti-ultraviolet radiation agent is 30% A mixture of % weathering wood oil solution and 70% glycerin, the porous protective agent is nanoporous SiO with ethylene glycol as solvent 2 Granular, nanoporous SiO 2 The mass / volume ratio of particles and ethylene glycol is 40g / mL, and the nanoporous SiO 2 The particle size of the particles is 20-50 nm.

[0063] The preparation method of the anti-ultraviolet radiation film that can be used for optoelectronic device is as follows:

[0064] (1) First clean the optoelectronic device or the surface subst...

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Abstract

The invention discloses an anti-ultraviolet radiation thin film material and an anti-ultraviolet radiation thin film for an optoelectronic device and a preparation method of the anti-ultraviolet radiation thin film. The anti-ultraviolet radiation thin film material comprises the following components in percentage by mass: 25-45% of an anti-ultraviolet radiation agent, 14-16% of a porous protectiveagent and 40-60% of a mixed solvent. The anti-ultraviolet radiation thin film material utilizes a porous structure of the porous protective agent to protect the activity of the anti-ultraviolet radiation agent and increase the specific surface area of molecular distribution of the anti-ultraviolet radiation agent, so that the formed anti-ultraviolet radiation thin film has excellent anti-ultraviolet radiation performance.

Description

technical field [0001] The invention belongs to the technical field of anti-ultraviolet radiation materials, and in particular relates to an anti-ultraviolet radiation film material, an anti-ultraviolet radiation film and a preparation method thereof which can be used in optoelectronic devices. Background technique [0002] Optoelectronic devices are various functional devices made using the electro-photon conversion effect. Optoelectronic devices are the key and core components of optoelectronic technology, the frontier research field of modern optoelectronic technology and microelectronic technology, and an important part of information technology. Optoelectronic devices must withstand the test of the external environment in order to ensure the reliability of the entire electronic equipment. Among them, ultraviolet radiation will seriously accelerate the aging process of equipment, damage internal components, and have a significant impact on the electrical and mechanical ...

Claims

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Application Information

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IPC IPC(8): C09D133/04C09D7/48C09D7/20C09D7/61H01L31/0216
CPCC08K2201/003C08K2201/011C08L2201/08C08L2203/206C09D133/04C09D7/20C09D7/48C09D7/61C09D7/67C09D7/70H01L31/0216C08L91/00C08K7/26C08K5/053
Inventor 于军胜周殿力李嘉文黄江
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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