SiC crystal growth device and method

Abstract

The invention provides a SiC crystal growth device and method, and relates to the technical field of SiC crystal preparation. The SiC crystal growth device comprises a cake-shaped crucible and a heating mechanism, wherein the cake-shaped crucible comprises a hollow inner cavity; a SiC crystal bar is arranged in the center of the inner cavity; two ends of the SiC crystal bar abut against the upperend surface and the lower end surface of the inner cavity respectively; a SiC raw material is arranged in the circumferential direction of the inner cavity; a gap is formed between the SiC raw material and the SiC crystal bar; and the heating mechanism is arranged outside the cake-shaped crucible and used for constructing a temperature field of which the temperature from the SiC raw material to the SiC crystal bar is gradually reduced. Thus, gas obtained by heating and sublimation of the SiC raw material can be diffused towards the SiC crystal bar and deposited on the side wall of the SiC crystal bar, and the SiC crystal bar grows and becomes large in the side direction, so a small-size SiC crystal bar grows into a large-size crystal; the crucible does not need to be replaced for a plurality of times for diameter expansion; the yield is high; and the time of diameter expansion is short.

Description

technical field [0001] The invention relates to the technical field of SiC crystal preparation, in particular to a SiC crystal growth device and method. Background technique [0002] Silicon carbide single crystal material belongs to the representative of the third generation wide bandgap semiconductor material, which has the characteristics of wide bandgap, high thermal conductivity, high breakdown electric field, and high radiation resistance. At present, physical vapor deposition (PVT) is the main growth method for silicon carbide single crystal growth, which has been proved to be the most mature method for growing SiC crystals. The SiC powder is heated to 2300°C, and sublimated and crystallized into block crystals in an inert gas atmosphere such as argon. The growth process needs to establish a suitable temperature field so that the gas phase components Si, Si2C, and SiC2 can grow stably on the seed crystal. [0003] Commercially available SiC crystals range in size fr...

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Problems solved by technology

[0004] The object of the present invention is to provide a SiC crystal production device and method, to alleviate the existing crystal diameter expansion method, when expanding the diameter from a small-sized crystal to a large-sized crystal, it is necessary to repeatedly replace the crucible to expand the diameter, the yield rate is low, and Technical problem of long expansion time

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