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A write-once-read-many memory based on hybrid perovskite and its preparation method

A multi-read, perovskite technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc. Improvement and other issues, to achieve the effect of simple preparation method, simplified process flow and low misreading rate

Active Publication Date: 2021-03-30
HUNAN FIRST NORMAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this device, the perovskite film is prepared by vapor deposition method, the process is complicated, the switch of the device is relatively low, and the function of writing once and reading multiple times cannot be realized.
And the Chinese invention patent, authorized announcement number CN 107316939 B, the title of the invention is "a two-dimensional perovskite electric storage device based on pseudohalogen induction and its preparation method", and the memory in this patent is realized by two-dimensional perovskite materials However, the writing voltage of the device is high, the preparation process is demanding, and the preparation process needs nitrogen protection, and the switching ratio of the device still needs to be further improved.

Method used

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  • A write-once-read-many memory based on hybrid perovskite and its preparation method
  • A write-once-read-many memory based on hybrid perovskite and its preparation method
  • A write-once-read-many memory based on hybrid perovskite and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0044] (1) Cleaning ITO

[0045] The ITO conductive glass is first accepted for 30 minutes in deionized water, acetone, alcohol, and then irradiate the ITO surface with ultraviolet light in the UV cleaning device for 20 minutes;

[0046] (2) Configuring a calcium titanium ore precursor solution

[0047] 0.229 g of bromide and 0.070 g of bromide were weighed in 1: 1, mixed in a 1 ml acetate solution, and then stirred at 60 ° C for 2 hours, prepared calcium titanium concentrations of 300 mg / mL. Mine precursor solution;

[0048] (3) Preparation of perovskite film

[0049] In the air environment, the ITO substrate in step (1) was heated to 90 ° C, and the propanmetric precursor solution in step (2) was taken in the surface of the propanoform, and the spin coater rotational speed was set to 4000 rpm. Time is 20s, then annealed at 100 ° C for 5 min, resulting in a curing calcium titanium ore active layer having a thickness of 300 nm, and its surface topography is figure 2 Indicated; ...

Embodiment 2

[0055] (1) Cleaning ITO

[0056] The ITO conductive glass is first in terms of deionized water, acetone, alcohol, and then irradiate the ITO surface for 15 minutes with ultraviolet light in the UV cleaning instrument;

[0057] (2) Configuring a calcium titanium ore precursor solution

[0058] 0.229 g of bromide and 0.070 g of bromide were weighed in 1: 1, mixed in a 1 ml acetate solution, and then stirred at 60 ° C for 2 hours, prepared calcium titanium concentrations of 300 mg / mL. Mine precursor solution;

[0059] (3) Preparation of perovskite film

[0060] In the air environment, the ITO substrate in step (1) was heated to 100 ° C, and the propanmetric precursor solution in step (2) was used to spin coating in the surface of the perovskite precursor solution in step (2), and the spin coater speed was set to 4000 rpm. Time is 20s, then annealed at 100 ° C for 5 min, resulting in a curing calcium-titanium ore active layer having a thickness of 300 nm;

[0061] (4) Preparation to...

Embodiment 3

[0066] (1) Cleaning ITO

[0067] The ITO conductive glass is first accepted for 30 minutes in deionized water, acetone, alcohol, and then irradiate the ITO surface with ultraviolet light in the UV cleaning device for 20 minutes;

[0068] (2) Configuring a calcium titanium ore precursor solution

[0069] 0.229 g of bromide and 0.070 g of bromide were weighed in 1: 1, mixed in a 1 ml acetate solution, and then stirred at 60 ° C for 2 hours, prepared calcium titanium concentrations of 300 mg / mL. Mine precursor solution;

[0070] (3) Preparation of perovskite film

[0071] In the air environment, the ITO substrate in step (1) is heated to 90 ° C, and the propanoferous precursor solution in step (2) is used to spin coating in the ITO surface using the pipette amount of the pipette, and the spin coater speed is set to 3000 rpm. The time is 20s, then annealed at 90 ° C for 5 min, resulting in a curing calcium-titanium ore active layer having a thickness of 350 nm;

[0072] (4) Preparat...

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Abstract

The invention discloses a write-once-read-many memory based on a hybrid perovskite and a preparation method thereof, and relates to the technical field of semiconductor materials and functional devices. The resistive variable memory of the present invention comprises a glass substrate, a bottom electrode, a hybrid perovskite resistive layer and a top electrode in order from bottom to top. Wherein: the resistive layer material is CH 3 NH 3 PbBr 3 Thin film, the process of preparing perovskite thin film in air by solution method. The memory preparation method of the present invention is as follows: spin-coat CH on the pretreated bottom electrode surface 3 NH 3 PbBr 3 thin film layer; in the CH 3 NH 3 PbBr 3 Metal electrodes are evaporated on the surface of the film layer. The raw materials used in the invention are easy to obtain, and the preparation process is simple, green and environmentally friendly, and the operability is strong. The prepared resistive memory has a simple structure, low writing voltage, and high switching ratio, which is beneficial to industrial application.

Description

Technical field [0001] The present invention relates to the field of semiconductor materials and functional device, and more particularly to a write multiple reading memory based on hybrid calcium titanium ore and its preparation method thereof. Background technique [0002] Memory is an important part of modern information technology. With the rapid development of artificial intelligence and large data technology, the amount of data is rapidly increased, and the data processing capacity of memory is continuously improved. The traditional flash technology has a slow eramed speed, high power consumption, and is difficult to adapt to future memory development needs. The transformation memory has the advantages of simple structure, high storage density, fast read / write speed, long life and complementary metal oxide semiconductor process, is ideal for next-generation non-volatile memory. Therefore, the development of stable storage performance, low cost, has become a research hotsp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/10H01L51/40
CPCH10K71/12H10K71/60H10K10/29H10K10/50H10K10/82
Inventor 李必鑫陈永华夏英东黄维
Owner HUNAN FIRST NORMAL UNIV
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