10 results about "Pseudohalogen" patented technology

This invention relates to a fullerene derivative, its preparation method and application, and a tin-based perovskite solar cell photovoltaic device, belonging to the field of optoelectronic materials and devices technology. The fullerene derivative of this invention has the structure shown in Formula I; in Formula I, X... ‑ It is a halide ion or pseudohalogen ion; R is an alkenyl, four-membered cycloalkyl, or dithiocyclopentyl; Fu is C 60 C 70 C 84 Alternatively, it can be an embedded metallofullerene. In the fullerene derivatives of this invention, R is an alkenyl, a four-membered cycloalkyl, or a dithiocyclopentyl group. R can open double bonds or open rings to form polymers. Furthermore, the thiol group after ring opening of the dithiocyclopentyl group and the carbonyl group in the structure can form coordination bonds with divalent tin ions in tin-based perovskite solar cells, thereby regulating the crystallization rate of perovskite and reducing the lattice stress of perovskite. At the same time, the fullerene derivatives have good solubility, reducing the lattice stress generated by rapid crystallization of the perovskite active layer, and further improving the stability of tin-based perovskite solar cells.

The invention provides a lead halide perovskite seed crystal and a preparation method thereof, and a lead halide perovskite microcrystal and a preparation method thereof. The preparation method of the lead halide perovskite seed crystal comprises the following steps: mixing a pseudo-halogen additive, first AX, first BX2 and a first solvent to form first sol, and heating the first sol to separate out crystals to obtain the lead halide perovskite seed crystal. The microcrystal is prepared by using the seed crystal as a raw material through slow heating crystallization. According to the method provided by the invention, the crystallization quality can be improved while the crystallization speed is increased.

Embodiments of the present disclosure are directed to methods of selectively etching silicon. The methods include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and one or more of an amine, a phosphine, a glycol, or an acid, or a mixture of one or more of the interhalogen, the halogen-containing species, the pseudohalogen species and a sulfur-containing species, into a semiconductor processing chamber containing a substrate; forming an activated species of the precursor; and exposing the substrate to the activated species to etch the substrate. The methods selectively etch silicon relative to silicon germanium, silicon oxide, and / or silicon nitride.

The application provides a perovskite solar cell, a preparation method and application thereof. The perovskite solar cell comprises a first electrode, a perovskite light-absorbing layer, a passivation layer and a second electrode, wherein the passivation layer comprises a passivation agent, the passivation agent comprises a positive charge group and an electron-rich group, the positive charge group comprises -NH3X, X comprises any one of halogen, pseudohalogen and -COOR, R comprises any one of C1-C6 alkyl, and the electron-rich group comprises any one of C1-C6 halogenated alkyl, C1-C6 alkoxy, C1-C6 alkylthio, -SCN and -SH.

The present application discloses a solar cell, an interface passivation material, a photovoltaic power generation system, and an electric device. The solar cell includes an interface passivation material, the interface passivation material including a first compound represented by chemical formula (1) and / or a second compound represented by chemical formula (2): where Ar is an aromatic group, Q is a functional group containing active hydrogen, A+ is selected from an ammonium group or a phosphonium group, X- is selected from any one of a halogen ion, a pseudohalogen ion, an oxyanion ion, a fluorine-containing borate ion, or a sulfonyl imide anion. The interface passivation material can be used in solar cells to passivate interface defects in the light absorption layer, improve carrier transport performance, and improve the photoelectric conversion efficiency and stability of the solar cell.

This invention belongs to the field of polarized light-emitting materials technology, specifically relating to chiral perovskite thin films, their preparation methods, and circularly polarized light-emitting diode devices. The invention uses phenylalanine hydrochloride as a raw material, mixing phenylalanine hydrochloride solution and tetrafluoroborate solution to undergo an ion exchange reaction, forming a chiral compound with tetrafluoroborate as the anion and phenylalanine as the cation, thus obtaining a pseudohalogenated chiral ligand. Using an antisolvent, the pseudohalogenated chiral ligand is introduced into the perovskite precursor solution, forming a chiral perovskite thin film at the perovskite interface. This allows for the effective injection of spin-polarized charge carriers through chiral-induced spin selectivity, resulting in recombination within the device and the generation of circularly polarized light emission.

Embodiments of the present disclosure are directed to selective etching processes. The processes include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and an amine or a phosphine, or a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species with a sulfur-containing species, into a semiconductor processing chamber containing a substrate, and forming an activated species of the precursor to etch a substrate. The substrate has a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

The invention discloses a BODIPY derivative and application thereof, the BODIPY derivative is a compound with a structure shown as a general formula (I), in the formula (I), R1, R2, R3, R4, R5 and R6 are independently selected from hydrogen atoms, C1-C6 alkyl groups, C2-C6 alkenyl groups, C3-C8 carbocyclic groups, C1-C6 alkoxy groups, amino groups or substituted amino groups, halogen, pseudo-halogen groups, C1-C6 acyloxy groups, carbonyl groups, carboxyl groups, ester groups, substituted or unsubstituted phenyl groups and nitryl groups; r7 is a hydrogen atom or a carboxyl group; R8 and R9 are hydroxyl groups or hydrogen atoms; ar is an aromatic group; and m and n are integers from 0 to 6. The BODIPY derivative not only can endow a coating with good base material adhesion performance, but also can realize an efficient photodynamic antibacterial effect, and meanwhile, effectively overcomes the defects in the prior art.

The invention relates to the technical field of perovskite solar cells, in particular to a halogenated terminal-containing self-assembled monomolecular layer hole transport material, which is Ph-nPACz-X, n is a positive integer from 2 to 10; x is halogen or a pseudo-halogen group. Meanwhile, the invention also discloses a synthesis method of the perovskite solar cell and application of the perovskite solar cell in unijunction and laminated perovskite solar cells. According to the invention, carbazole with a rigid conjugate plane is used as a parent nucleus, and the hole transport performance and the molecular accumulation mode of the material are regulated and controlled through introduction of a benzene ring; by introducing halogen such as iodine, bromine and chlorine and pseudo-halogen groups such as cyano and thiocyano to the tail end of a benzene ring, contact and passivation with a perovskite interface are improved, and energy loss at the interface is reduced; and finally, taking alkyl phosphoric acid with different lengths as anchoring groups to realize substrate self-assembly and effective hole transport. The synthesis method is simple, the synthesis cost is low, and the prepared material can realize dual functions of hole transport and perovskite interface passivation.

The present application provides a perovskite solar cell, a manufacturing method therefor, and the use thereof. The perovskite solar cell comprises a first electrode, a perovskite light-absorbing layer, a passivation layer, and a second electrode. The passivation layer comprises a passivating agent, the passivating agent comprising a positively charged group and an electron-rich group; the positively charged group comprises -NH3X, where X comprises any one of halogen, pseudohalogen, and -COOR, and R comprises any one of C1-C6 alkyl groups; and the electron-rich group comprises any one of C1-C6 haloalkyl, C1-C6 alkoxy, C1-C6 alkylthio, -SCN, and -SH.