Doping method of silicon carbide component and preparation method thereof

Abstract

The invention discloses a doping method of a silicon carbide component and a preparation method of the silicon carbide component. The method comprises the following steps: S1, providing a semiconductor substrate, carrying out pretreatment on the semiconductor substrate; S2, growing an epitaxial layer on a surface of the pretreated semiconductor substrate, and depositing a silicon dioxide mask witha certain thickness on an outer surface of the epitaxial layer, S3, etching the silicon dioxide mask and forming a trench with a preset depth-to-width ratio such that a region needing to be doped isexposed; and S4, carrying out N times of ion implantation doping on the exposed doped region by using aluminum ions and nitrogen ions. Different implantation temperatures can be selected according todifferent ion implantation energies and different ion implantation dosages, and a uniform implantation structure is formed after multiple times of implantation such that the ion implantation damage isreduced, and the activation rate of implanted ions is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor components, and in particular relates to a method for doping silicon carbide components and a preparation method thereof. Background technique [0002] Silicon carbide material has excellent physical and electrical properties. With its unique advantages such as wide band gap, high thermal conductivity, large saturation drift velocity and high critical breakdown electric field, it has become a high-power, high-frequency, durable Ideal semiconductor material for high temperature, radiation hardened devices. The breakdown voltage of silicon carbide power electronic devices can reach ten times that of silicon devices, and the on-resistance is only one tenth of that of silicon devices. The switching speed is fast, the thermal conductivity is high, the power conversion loss is small, and the heat dissipation system is simple. Ultimately, the volume and weight of the entire system are significantl...

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Problems solved by technology

If the implanted ions reach a deep implanted area in the SiC material, the implanted energy may need to reach the MeV level. However, high-energy ion implanted will cause serious damage to the material surface in the implanted area, and the implanted ion activation rate is low.

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