Quantum dot light-emitting diode and preparation method thereof
A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of reduced device life and too many interfaces of quantum dot light-emitting diodes
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Embodiment 1
[0088] The preparation steps of the alkali metal-doped transition metal oxide of the present embodiment are as follows:
[0089] 1) Add 0.1g of tungsten powder into 10mL of ethanol, and perform ultrasonic treatment for 10 minutes to disperse the tungsten powder evenly;
[0090] 2) Add 0.3mL of hydrogen peroxide solution and stir for 24 hours with magnetic force;
[0091] 3), the product H x WO 3 The solution was put into a drying oven to dry the solvent to obtain solid H x WO 3 ;
[0092] 4), the solid H x WO 3 Dissolve it in ethanol again, configure it into a 1mg / mL solution, and set aside;
[0093] 5), the LiCO 3 Dissolve the powder in 2-methoxyethanol to prepare a 10mg / mL solution;
[0094] 6), the above LiCO 3 The solution was added dropwise to the above H x WO 3 ethanol solution, and continuously stirred for 1 hour to generate Li-doped WO 3 .
Embodiment 2
[0096] The preparation steps of the quantum dot light-emitting diode of this embodiment are as follows:
[0097] 1) Use the transparent conductive film ITO as the cathode, and control the thickness to 50nm;
[0098] 2) Deposit ZnO nanoparticles on the cathode as an electron transport layer by solution method, with a thickness of 40nm;
[0099] 3) On the electron transport layer, ZnCdS / ZnS is deposited as a quantum dot light-emitting layer by solution method, with a thickness of 25nm;
[0100] 4) Transfer the above substrate to the evaporation chamber and vacuumize to 5*10 -5 Pa, then evaporated MoO 3 As a hole transport layer, the thickness is 30nm;
[0101] 5) Ag is vapor-deposited on the hole transport layer as an anode with a thickness of 120nm, and the quantum dot light-emitting diode is prepared.
Embodiment 3
[0103] The preparation steps of the quantum dot light-emitting diode of this embodiment are as follows:
[0104] 1) Use the transparent conductive film ITO as the cathode with a thickness of 50nm;
[0105] 2) Deposit ZnO nanoparticles on the cathode as an electron transport layer by solution method, with a thickness of 40nm;
[0106] 3) Deposit CsPbBr on the electron transport layer by solution method 3 As a quantum dot light-emitting layer, the thickness of this layer is 30nm;
[0107] 4) Deposit Li-doped WO on the quantum dot luminescent layer by solution method 3 (5% doping concentration) as a hole transport layer with a thickness of 50nm;
[0108] 5) Ag is vapor-deposited on the hole transport layer as an anode with a thickness of 120nm, and the quantum dot light-emitting diode is prepared.
[0109] In summary, a kind of quantum dot light-emitting diode provided by the present invention and preparation method thereof, in 10 -5 Evaporating n-type semiconductor material...
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Abstract
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