Fin-like spacer-modulated hemt device based on transconductance compensation method and preparation method thereof

Abstract

The invention relates to a Fin-like sidewall modulated HEMT device based on a transconductance compensation method and a preparation method thereof. The HEMT device comprises: a substrate layer; an insertion layer located on the substrate layer; a buffer layer located on the insertion layer; a source electrode , located at one end of the buffer layer; the drain electrode, located at the other end of the buffer layer; the barrier layer, located on the buffer layer, and located between the source electrode and the drain electrode, wherein the barrier layer is provided with barriers arranged along the gate width direction Several grooves, the depth of the grooves is less than the thickness of the barrier layer; the passivation layer covers the source electrode, the drain electrode and the barrier layer, wherein, along the gate width direction, there are gate grooves running through the passivation layer, and A plurality of grooves are located under the gate groove; a gate electrode is located in the plurality of grooves and the gate groove, and is located on the surface of the passivation layer; a metal interconnection layer runs through the passivation layer and is located on the source electrode and the drain electrode. The HEMT device forms a Fin-like structure by arranging several grooves along the gate width direction, which can meet the application requirements of high frequency and high linearity and high voltage and high linearity.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a Fin-like sidewall modulated HEMT device based on a transconductance compensation method and a preparation method thereof. Background technique [0002] In recent years, with the surge in demand for the Internet of Things and the development of mobile devices, people have higher requirements for the transmission efficiency of wireless communication technologies. For example, in millimeter wave applications such as 5G-LTE, WIMAX, satellite communication, radar, and space applications, the power amplifier (PA) is an important part of the communication link transmitter. In order to obtain sufficient transmission power, it must Work under the condition of high power output, but at this time PA will consume a lot of power, the linearity is very poor, resulting in low transmission efficiency, signal distortion and degradation of transmission quality, so in or...

AI Technical Summary

Problems solved by technology

However, due to the large gate parasitic capacitance introduced by the insulating layer under the gate, the frequency characteristics of the device are deteriorated, and it is not suitable for making high-frequency devices.

[0010] In summary, the methods for improving device linearity in the prior art have the problems of large device etching damage, thick barrier layer, and large gate parasitic capacitance, which limits the application of linear devices at high frequencies.

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