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Atomic-scale material controllable removal method based on extreme ultraviolet light

An extreme ultraviolet light, atomic-level technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as the nano-precision stage of laser processing technology, reduce the energy range, avoid surface damage, and meet manufacturing needs Effect

Active Publication Date: 2020-07-28
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Processing methods based on the interaction of light and matter have the potential to simultaneously satisfy the above characteristics, but the current laser processing technology is still in the stage of nanometer precision

Method used

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  • Atomic-scale material controllable removal method based on extreme ultraviolet light
  • Atomic-scale material controllable removal method based on extreme ultraviolet light
  • Atomic-scale material controllable removal method based on extreme ultraviolet light

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Embodiment Construction

[0023] The present invention will be further described in detail below through the specific examples, the following examples are only descriptive, not restrictive, and cannot limit the protection scope of the present invention with this.

[0024] A method for the controllable removal of atomic-level materials based on extreme ultraviolet light, the specific steps are as follows:

[0025] (1) Carry out chemical mechanical polishing and annealing pretreatment on the single crystal silicon material to obtain a nanoscale initial surface with a surface roughness Sa of 0.1-0.2nm;

[0026] (2) Calculate the initial value of the irradiation energy density according to the chemical bond data of the material and the parameters of the extreme ultraviolet light source;

[0027] Such as figure 1 As shown, let the chemical bond number density in the monoatomic layer on the surface of the single crystal silicon material be n b-s , the average bond energy is ε s ; The spacing between cryst...

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Abstract

The invention provides a novel atomic layer removal processing method based on extreme ultraviolet ultrashort pulses, surface damage caused by machining can be effectively avoided, and the high-efficiency requirement of actual production can be met by increasing an irradiation area and the relative movement of an extreme ultraviolet beam and an objective table, moreover, all materials have a strong absorption effect on extreme ultraviolet light, and the absorption process is concentrated on a surface layer of the electrode, compared with the existing laser processing technology, the energy action range is obviously reduced, processing precision is improved, material universality is extremely high, and manufacturing requirements of atomic-scale surfaces and structures are met.

Description

technical field [0001] The invention belongs to the field of atomic and near-atomic scale manufacturing, and relates to extreme ultraviolet light ultrashort pulse technology, in particular to an atomic-level material controllable removal method based on extreme ultraviolet light ultrashort pulse. Background technique [0002] Next-generation core devices in the information field, such as quantum chips and photonic chips, are the focus of future technological competition among countries. Since the surface and characteristic structures of such next-generation core devices have reached the atomic level, they are very sensitive to the size change of the energy field. The atomic-level surface is the basic element of future core devices. On the one hand, it has geometric precision such as atomic and near-atomic roughness, shape error, etc., and at the same time requires the material lattice to be in a state of low damage or even no damage. This surface quality approaching the mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268
CPCH01L21/268
Inventor 房丰洲王金石
Owner TIANJIN UNIV