A stacked crimp package structure of silicon carbide dsrd

A packaging structure and stacking technology, applied in the field of device packaging, can solve the problems of thermal mismatch, partial discharge, unreliability, etc., and achieve the effects of reducing electrical connections, improving reliability, and realizing fringe electric fields

Active Publication Date: 2021-11-19
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a silicon carbide DSRD stacked crimping packaging structure, which is used to solve the thermal mismatch and local problems caused by connecting multiple silicon carbide DSRDs end to end through welding in the existing packaging of multiple silicon carbide DSRDs. The unreliable problem of discharge

Method used

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  • A stacked crimp package structure of silicon carbide dsrd
  • A stacked crimp package structure of silicon carbide dsrd
  • A stacked crimp package structure of silicon carbide dsrd

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Embodiment 1

[0033] A stacked press-fit package structure of SiC DSRD, such as figure 1 As shown, it includes: a plurality of first packaging chips, a plurality of second packaging chips, a plurality of DSRD chips, and positive and negative wiring elements.

[0034] Among them, the DSRD chip is a silicon carbide chip, and a layer of first packaging sheets is stacked on both sides of each DSRD chip to form a packaging sub-module; a layer of second packaging sheets is stacked between each adjacent two packaging sub-modules to form a The vertical structure of stacked crimping; in this vertical structure, each adjacent two layers are connected by pressure to realize the electrical connection between each two DSRD chips, and the positive and negative wiring elements are respectively connected to the positive and negative ends of the vertical structure . The material of the first packaging sheet matches the thermal expansion coefficient of the DSRD chip material to avoid thermal deformation cau...

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Abstract

The invention belongs to the field of device packaging, and specifically relates to a silicon carbide DSRD stacked crimping packaging structure, comprising: multiple first packaging sheets, multiple second packaging sheets, multiple silicon carbide DSRD chips, positive and negative wiring elements . A layer of first packaging sheets are stacked on both sides of each chip to form a packaging sub-module; every two adjacent packaging sub-modules are stacked to form a stacked crimping vertical structure by stacking second packaging sheets; in this vertical structure, each adjacent two The end-to-end electrical connection between each two chips is realized through pressure contact between layers, and the positive and negative wiring elements are respectively connected to the positive and negative terminals of the vertical structure. The first encapsulation sheet is used to avoid thermal deformation due to thermal mismatch between materials during chip operation; the second encapsulation sheet acts as a buffer and is used to realize optimal modulation of the electric field at the edge of the chip. The present invention adopts the form of vertical stacking and crimping, which is convenient for structural installation and replacement of failed devices, while avoiding the problem of thermal deformation, realizing electric field modulation, and avoiding partial discharge.

Description

technical field [0001] The invention belongs to the field of device packaging, and more specifically relates to a stacked crimping packaging structure of silicon carbide DSRDs. Background technique [0002] As modern pulse power applications have higher and higher requirements for power devices, in order to simultaneously generate high-voltage and high-speed pulses, DSRD (drift step recovery diode) has been developed in the field of semiconductor pulse power switches. DSRD is a drift step recovery diode, with high withstand voltage, high repetition frequency, and simple structure. The withstand voltage of a single DSRD conventionally produced is mostly under 0.5-2.0kV, and the turn-off time is only 2ns. There is a great development in pulse technology. space. [0003] A high-voltage chip requires a thick epitaxial layer and a deep mesa edge structure, which is difficult to manufacture, and it is difficult for a single DSRD chip to obtain a high breakdown voltage under the r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L23/31H01L23/48H01L23/367H01L23/60
CPCH01L23/3121H01L23/367H01L23/481H01L23/60H01L25/071H01L2224/33181
Inventor 梁琳杨英杰
Owner HUAZHONG UNIV OF SCI & TECH
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