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Z-cut lnoi electro-optic modulator with improved modulation efficiency and its application

An electro-optic modulator and modulation efficiency technology, which is applied in the field of integrated optics, can solve the problems of low electro-optic modulation efficiency, high device power consumption, and high half-wave voltage, and achieve high electro-optic efficiency, increase modulation bandwidth, and reduce half-wave voltage. Effect

Active Publication Date: 2021-04-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electrodes of traditional lithium niobate modulators mostly adopt the form of coplanar electrodes, and a large part of the electric field does not act on the optical field, resulting in low electro-optical modulation efficiency, high half-wave voltage, and high power consumption of the device

Method used

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  • Z-cut lnoi electro-optic modulator with improved modulation efficiency and its application

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Embodiment

[0057] Such as figure 1As shown, this embodiment provides a Z-cut LNOI electro-optic modulator with high modulation efficiency, including a substrate 1 , an insulating layer 2 , a waveguide core layer 3 , an upper cladding layer 4 , a signal electrode 5 , a ground electrode 6 , and a slot 7 .

[0058] The upper surface of the substrate 1 is an insulating layer 2, and the upper surface of the insulating layer 2 is a LN film layer. Usually, the thickness of the ultra-thin film layer is less than 1 micron. The waveguide core layer 3 is prepared on the uppermost layer of the LN film. It can be made into a ridge or strip type, and then a certain thickness of the upper cladding 4 is deposited on the 3. The difference in refractive index between the waveguide core 3 and the upper cladding 4 is compared with that of niobic acid formed by traditional titanium diffusion or proton exchange. The refractive index difference of the lithium waveguide is about 70 to 80 times larger, so the li...

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Abstract

A Z-cut LNOI electro-optic modulator for improving modulation efficiency and its application, the Z-cut LNOI electro-optic modulator includes a substrate, the bottom of which is provided with a groove; an insulating layer, which is arranged on the substrate; a waveguide core layer, which is arranged on On the insulating layer, the tangential direction is Z-cut; the upper cladding layer is arranged on the waveguide core layer, which is used to form a refractive index difference with the waveguide core layer to limit the transmission of the light field, and at the same time serves as a support structure for the upper electrode; the signal electrode, set At the position corresponding to the optical waveguide on the cladding layer, it is used to apply an electric signal to form an electric field to perform electro-optic modulation on the light in the core layer of the waveguide; and the ground electrode, which is arranged in the groove, and the electric field between the signal electrode and the Z-cut LN the direction of the optical axis. The invention realizes nearly 100% ultra-high-efficiency electro-optic modulation of the electric field to the light field, thereby greatly reducing the half-wave voltage of the modulator and reducing the power consumption of the modulator.

Description

technical field [0001] The invention belongs to the field of integrated optics, and more specifically relates to a Z-cut LNOI electro-optic modulator for improving modulation efficiency and its application. Background technique [0002] As one of the core devices in optical communication and optical interconnection systems, the modulator realizes the conversion of electrical signals to optical signals, and its performance directly determines the performance of the entire communication system. It is used in long-distance optical communication links, data centers, supercomputers, etc. In short-distance communication interconnection application scenarios, in addition to "high speed and large capacity", "miniaturization, integration and low loss" are also important requirements and development goals, so the development of easy-to-integrate, low-power, low-cost optoelectronic devices is There is an urgent need to facilitate the development of high-speed optical communication syst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/03G02F1/035
CPCG02F1/0316G02F1/035
Inventor 李金野刘建国戴双兴李明轩赵奕儒
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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