High-speed high-efficiency high-voltage half-bridge gate drive circuit

Abstract

The invention belongs to the technical field of integrated circuits. The invention particularly relates to a high-speed high-efficiency high-voltage half-bridge gate drive circuit used for driving a gate of a power device in a power electronic system. The circuit comprises an input receiving circuit, a dead zone signal generating circuit, a low-voltage generating circuit, a low-side signal delay circuit, a low-side high-efficiency output driving circuit, a low-delay high-voltage level shifting circuit and a high-side high-efficiency output driving circuit. According to the high-speed high-efficiency high-voltage half-bridge gate drive circuit provided by the invention, the delay of a level shift circuit is reduced through a positive feedback drive current enhancement technology such that the overall drive circuit speed is improved; the driving current can be adaptively adjusted according to the size of the load and the frequency of the input control pulse such that the power supply efficiency of the driving circuit is improved to the greatest extent; the gate drive circuit can be widely applied to various high-power-density power electronic systems, in particular to the gate driveapplication of wide bandgap power devices with higher frequency requirements.

Description

technical field [0001] The invention relates to a high-speed, high-efficiency, high-voltage half-bridge gate drive circuit for power electronic systems, belonging to the technical field of integrated circuits. Background technique [0002] In the 21st century, driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and increased functionality, especially requiring circuit applications in terms of size, quality, power, and efficiency. trade-offs, such as server power management, battery chargers, and microinverters for solar farms. The above applications require the power electronic system to have high power density (>500W / in 3 , namely 30.5W / cm 3 ), high specific power (10kW / lb, 22kW / kg) and high total load point (>1000W). With the emergence and popularization of super-junction MOSFETs and insulated gate bipolar transist...

AI Technical Summary

Problems solved by technology

A relatively large series connection protection resistor will bring two problems. One is that the switch on the resistor is damaged and the efficiency of the drive circuit is reduced; the other is that the drive delay is increased and the system switching frequency is finally reduced.

Images