Piezoresistive pressure sensor chip with stress concentration structure and preparation method thereof

A pressure sensor and stress concentration technology, applied in the field of microelectromechanical sensors, can solve problems such as affecting sensor performance, and achieve the effects of easy mass production, high frequency response, and high reliability

Active Publication Date: 2020-08-07
XI AN JIAOTONG UNIV +1
View PDF11 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a mutual restrictive relationship between sensitivity and linearity, which affects the further improvement of sensor performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoresistive pressure sensor chip with stress concentration structure and preparation method thereof
  • Piezoresistive pressure sensor chip with stress concentration structure and preparation method thereof
  • Piezoresistive pressure sensor chip with stress concentration structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] In order to make the purpose and technical solution of the present invention clearer and easier to understand. The present invention will be further described in detail below in conjunction with the drawings and embodiments. The specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0049] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular ori...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Sensitivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a piezoresistive pressure sensor chip with a stress concentration structure and a preparation method thereof. The sensor chip is composed of a shallow groove film structure layer and a back cavity structure layer. The shallow groove thin film structure is divided into a shallow groove structure and a thin film structure. The shallow groove structure is composed of four shallow grooves distributed along the edge of the thin film and square shallow grooves distributed in the thin film, stress is concentrated between the ends of the two shallow groove structures, the distributed square shallow grooves further concentrate and adjust stress distribution, and the sensitivity of the sensor is improved. Four piezoresistor strips are evenly arranged at the stress concentration position, the four piezoresistor strips are connected through metal leads to form a semi-open-loop Wheatstone full bridge, and the bridge is connected with five bonding pads arranged on a substrateto achieve input and output of electric signals. The back cavity consists of a peninsula and an island, and a gap between the peninsula and the island corresponds to the end parts of the two shallowgroove structures. The peninsula and the island improve the stress concentration effect, and improve the rigidity of the sensor, so that the linearity of the sensor is improved.

Description

technical field [0001] The invention belongs to the technical field of micro-electromechanical sensors, and in particular relates to a piezoresistive pressure sensor chip with a stress concentration structure and a preparation method thereof. Background technique [0002] With the development of micro-mechanical electronic system technology, micro-pressure sensors have been widely used in aerospace, smart home, invasive medical equipment and other fields; with the rapid development of various fields, there are stricter requirements on the performance and volume of sensors. MEMS sensors are undoubtedly an ideal choice, especially in the field of biomedicine, which is in urgent need of micro-pressure measurement sensors with stable performance, high dynamics, and high sensitivity to guarantee. [0003] There are many measurement principles used by MEMS micro-pressure sensors, mainly piezoresistive, piezoelectric, capacitive, resonant, etc., but compared with other principles o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/20G01L9/02B81B7/02B81C1/00
CPCB81B7/02B81B2201/0264B81C1/00015G01L1/20G01L9/02
Inventor 赵立波皇咪咪徐廷中陈翠兰李学琛杨萍卢德江王鸿雁吴永顺魏于昆山涛蒋庄德
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products