Parameter adjustment method for single-rotation axisymmetric bending test of mems probe

A technology of symmetrical bending and parameter adjustment, applied in the direction of using stable bending force to test material strength, using stable tension/pressure to test material strength, measuring device, etc., can solve the problem of heat dissipation, which is difficult to solve, MEMS probe card technology New, narrow areas, etc.

Active Publication Date: 2020-11-03
MAXONE SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, no special testing equipment has been found for testing the properties of palladium alloy probes.
This situation is not only due to the new MEMS probe card technology and narrow field, it is difficult to have general-purpose equipment for direct application, but also it is difficult to manufacture special test equipment for testing the performance of palladium alloy probes. Due to the size of the MEMS probe card itself Tiny, the components are only millimeter level, so there are very strict requirements for the number of drive systems, if there are too many drive systems, not only cannot be arranged in a limited space, but also the problem of heat dissipation is difficult to solve

Method used

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  • Parameter adjustment method for single-rotation axisymmetric bending test of mems probe
  • Parameter adjustment method for single-rotation axisymmetric bending test of mems probe
  • Parameter adjustment method for single-rotation axisymmetric bending test of mems probe

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Experimental program
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Effect test

specific Embodiment approach 1

[0103] The following is a specific embodiment of the MEMS palladium alloy probe testing device of the present invention.

[0104] The MEMS palladium alloy probe testing device under the present embodiment, the structure schematic diagram is as follows figure 1 shown. The MEMS palladium alloy probe testing device comprises a barrel-shaped housing 1, a disturbance structure 2 arranged on the inner wall of the barrel-shaped housing 1, an electromagnetic pole 3 arranged on the outer wall of the barrel-shaped housing 1, and arranged horizontally in the barrel-shaped housing 1 Placed reference test platform 4, a symmetrical bending test structure 5 positioned above the reference test platform 4, a sealing cover 6 arranged above the barrel-shaped housing 1 and a sensor 7 installed on the sealing cover 6, a sprayer 8, a heater 9 and fan 10;

[0105] The disturbance structure 2 includes a disturbance body 2-1 with a circular cross section, a roller 2-2 and a tooth structure 2-3 dispo...

specific Embodiment approach 2

[0112] The following is a specific embodiment of the MEMS palladium alloy probe testing device of the present invention.

[0113] The MEMS palladium alloy probe test device under the present embodiment, on the basis of the specific embodiment one, further defines that the benchmark test platform includes a main board 4-1 and a plurality of sliders 4-2, and the main board 4-1 is provided with There are gaps from both sides to the center of symmetry, the cross-sectional shape of the gap is "I" shape, a slider 4-2 is inserted in the gap, and a plurality of vertical shafts are equally spaced on the slider 4-2 A circular through hole in a straight direction, the through hole can be equipped with a lifting structure 5-9, such as image 3 Shown; The material of described main board 4-1 and slide block 4-2 is different, specifically as follows:

[0114] First, the speed at which the volume of the material of the main board 4-1 increases with the increase of temperature is lower than ...

specific Embodiment approach 3

[0120] The following is a specific implementation of the benchmark test platform in the MEMS palladium alloy probe test device of the present invention.

[0121] The benchmark test platform under the present embodiment includes a main board 4-1 and a plurality of sliders 4-2, the main board 4-1 is provided with a gap from both sides to the symmetrical center direction, and the cross-sectional shape of the gap is "I" shape, a slider 4-2 is inserted in the gap, and a plurality of circular through holes in the vertical direction are equally spaced on the slider 4-2, and the through holes can be installed with a lifting structure 5- 9, such as image 3 Shown; The material of described main board 4-1 and slide block 4-2 is different, specifically as follows:

[0122] First, the speed at which the volume of the material of the main board 4-1 increases with the increase of temperature is lower than that of the material of the slider 4-2 with the increase of temperature. Before testi...

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Abstract

The present invention is oriented to the parameter adjustment method of MEMS probe single-axis symmetric bending test and belongs to the field of IC manufacturing industry; the method realizes lifting by changing the assembly position of the slider on the main board and selecting the position of the lifting structure inserted into the circular through hole on the slider The distance between the structure and the z-axis can be adjusted to meet the needs of different size probe tests; the lifting rod is selected as a telescopic structure, and the length of the lifting rod can be adjusted by changing the length of the lifting rod; the first plate and the second plate are selected as telescopic The structure, by changing the length of the first plate and the second plate, realizes the adjustment of the distance from point C or D to point o; Any one or any two or all three of these parameters can realize the adjustment of the single-direction motion displacement of the lifting structure, and then realize the test requirements of the probe under different parameters.

Description

technical field [0001] The invention relates to a parameter adjustment method for MEMS probe single-rotation axis symmetric bending test, which belongs to the field of IC manufacturing industry, and specifically relates to a device, method and related key technologies for performance testing of palladium alloy probes in MEMS probe cards. Background technique [0002] The probe card is a very important technology in the chip manufacturing process. Before the chip is packaged, the probes on the probe card directly contact the pads or bumps on the chip to lead out the chip signal, and then cooperate with peripheral testing instruments and Software control realizes automatic measurement, and then screens out defective products to ensure product yield. [0003] With the development of micro-electromechanical system (MEMS) technology, the size of the chip is getting smaller and smaller, reaching the order of millimeters, and the degree of integration inside the chip is getting hig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N3/08G01N3/20G01N3/02
CPCG01N3/02G01N3/08G01N3/20G01N2203/0017G01N2203/0023G01N2203/005
Inventor 于海超周明赵梁玉刘明星
Owner MAXONE SEMICON CO LTD
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