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Sulfur dioxide sensor based on organic field effect transistor and preparation method thereof

A sulfur dioxide and transistor technology, applied in the field of sulfur dioxide sensor and its preparation, can solve the problems of poor device life, low sensitivity, low integration, etc., and achieve the effects of reducing defect state density, improving overall performance, and enhancing stability

Active Publication Date: 2020-08-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is: the present invention provides a sulfur dioxide sensor based on an organic field effect transistor and its preparation method; it solves the problems of high cost, poor device life, low integration and low sensitivity in the existing sulfur dioxide sensor detection technology

Method used

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  • Sulfur dioxide sensor based on organic field effect transistor and preparation method thereof

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Effect test

Embodiment 1

[0033] Such as figure 1 As shown, a sulfur dioxide sensor based on an organic field effect transistor includes a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, and the organic semiconductor layer is arranged between the source electrode and the drain electrode. There is an ultrathin anthocyanin-coenzyme Q10 composite layer, and the organic semiconductor material is a soluble organic semiconductor material.

[0034] Its preparation method is as follows:

[0035] S1: Thoroughly clean the glass substrate on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0036] S2: Prepare PS film on ITO by spin coating method to form gate insulating layer 100nm;

[0037] S3: heat and bake the spin-coated PS film;

[0038] S4: Spin-coat P3HT organic semiconductor layer 100nm on the gate insulating layer;

[0039] S5: Prepare an ultra-thin anthocyanin-coenzyme Q10 c...

Embodiment 2

[0043] Such as figure 1 As shown, a sulfur dioxide sensor based on an organic field effect transistor includes a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, and the organic semiconductor layer is arranged between the source electrode and the drain electrode. There is an ultrathin anthocyanin-coenzyme Q10 composite layer, and the organic semiconductor material is a soluble organic semiconductor material.

[0044] Its preparation method is as follows:

[0045] S1: thoroughly clean the glass substrate 1 on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0046] S2: adopt spin-coating method to prepare PMMA thin film on ITO and form gate insulating layer 520nm;

[0047] S3: heat and bake the spin-coated PMMA film;

[0048] S4: spin-coat Tips-pentacene organic semiconductor layer 150nm on the gate insulating layer;

[0049] S5: Prepare an ultra-thi...

Embodiment 3

[0053] Such as figure 1 As shown, a sulfur dioxide sensor based on an organic field effect transistor includes a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, and the organic semiconductor layer is arranged between the source electrode and the drain electrode. There is an ultrathin anthocyanin-coenzyme Q10 composite layer, and the organic semiconductor material is a soluble organic semiconductor material.

[0054] Its preparation method is as follows:

[0055] S1: thoroughly clean the glass substrate 1 on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0056] S2: Prepare a PVA film on the ITO by spin coating to form a gate insulating layer of 20nm;

[0057] S3: heat and bake the spin-coated PVA film;

[0058] S4: Spin-coat Tips-pentacene organic semiconductor layer 200nm on the gate insulating layer;

[0059] S5: Prepare an ultra-thin anthocyan...

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Abstract

The invention discloses a sulfur dioxide sensor based on an organic field effect transistor and a preparation method thereof. The sensor comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, an ultrathin anthocyanidin-coenzyme Q10 composite layer is arranged between the organic semiconductor layer and the sourceelectrode and between the organic semiconductor layer and the drain electrode, and the organic semiconductor material is a soluble organic semiconductor material. According to the invention, the oxidation resistance of anthocyanin and coenzyme Q10 is utilized; the stability of the transistor device in the air is enhanced; meanwhile, the ultrathin anthocyanin-coenzyme Q10 composite layer can effectively fill up the defects on the surface of the organic semiconductor layer and reduce the defect state density, so that the mobility of the gas sensor is improved, the electrical property of the device is improved, and the complexity of a rear-end adaptive circuit is reduced.

Description

technical field [0001] The invention belongs to the technical field of electronic components, and in particular relates to a sulfur dioxide sensor based on an organic field effect transistor and a preparation method thereof. Background technique [0002] Sulfur dioxide is an important pollutant that causes air pollution. It mainly comes from three aspects, the combustion of sulfur-containing fossil fuels, the smelting of sulfur-containing ores, and the waste gas emitted from the production process of chemical plants and other enterprises. Sulfur dioxide has a pungent smell, and it will have adverse effects on human health at very low concentrations. Therefore, the detection of sulfur dioxide requires very high sensitivity. Compared with nitrogen dioxide, sulfur dioxide is not so oxidizing. , therefore, how to identify sulfur dioxide accurately and quickly is a hot spot in the research field. [0003] Traditional sulfur dioxide sensors are represented by spectrometers and ox...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
CPCG01N27/4141
Inventor 于军胜范惠东刘康宁杨根杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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