Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sr<2+> doped CsPbBr3 quantum dot germanium borosilicate glass as well as preparation method and application thereof

A technology of quantum dot glass and borosilicate glass, applied in glass manufacturing equipment, glass furnace equipment, manufacturing tools, etc., can solve the problems of environmental and human hazards, poisonous lead elements, etc., achieve convenient operation, improve stability, and improve luminescence efficiency effect

Active Publication Date: 2020-08-11
WUHAN UNIV OF TECH
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Because the lead element is toxic and harmful to the environment and human body, it has been restricted in use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sr&lt;2+&gt; doped CsPbBr3 quantum dot germanium borosilicate glass as well as preparation method and application thereof
  • Sr&lt;2+&gt; doped CsPbBr3 quantum dot germanium borosilicate glass as well as preparation method and application thereof
  • Sr&lt;2+&gt; doped CsPbBr3 quantum dot germanium borosilicate glass as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The above CsPbBr 3 The preparation method steps of quantum dot glass are as follows:

[0048] 1) Weigh GeO respectively according to the molar ratio of S1 components as mentioned above 2 : 12.37g; H 3 BO 3 : 6.77g; SiO 2 : 0.10g; ZnO: 1.34g; CaCO 3 : 0.99g; Na 2 CO 3 : 0.70g; NaBr: 2.70g; Cs 2 CO 3 : 4.86g; PbBr 2 : 4.26g. Add alcohol and zirconia grinding balls to the weighed raw materials in the mixing bottle, put them into the sample mixer and mix them thoroughly, then place them in a closed corundum crucible and keep them warm at 1200°C for 30 minutes to obtain a glass melt;

[0049] 2) Place the glass melt in a copper mold to form it quickly, then place it in a muffle furnace at 360°C for 3 hours for annealing, and obtain a colorless transparent glass after cooling;

[0050] 3) Cut the obtained transparent glass into a specific size for heat treatment. The heat treatment system is 460-550 ° C for 10 hours to obtain a glass containing CsPbBr 3 Quantum do...

Embodiment 2

[0052] The strontium ion-doped CsPbBr 3 The preparation method steps of quantum dot germanium borosilicate glass material are as follows:

[0053] 1) Weigh GeO respectively according to the molar ratio of S2 components as mentioned above 2 : 12.38g; H 3 BO 3 : 6.77g; SiO 2 : 0.10g; ZnO: 1.34g; CaCO 3 : 0.99g; Na 2 CO 3 : 0.70g; NaBr: 2.70g; Cs 2 CO 3 : 4.86g; PbBr 2 : 4.26g; SrBr 2 : 1.24g. Add alcohol and zirconia grinding balls to the weighed raw materials in the mixing bottle, put them into the sample mixer and mix them thoroughly, then place them in a closed corundum crucible and keep them warm at 1200°C for 30 minutes to obtain a glass melt;

[0054] 2) Place the glass melt in a copper mold to form it quickly, then place it in a muffle furnace at 360°C for 3 hours for annealing, and obtain a colorless transparent glass after cooling;

[0055] 3) Cut the obtained transparent glass into a specific size for heat treatment, the heat treatment system is 460-550 ° C...

Embodiment 3

[0057] The preparation method of the above-mentioned quantum dot-doped glass, the specific steps are as follows:

[0058] Weigh the GeO according to the molar ratio of the S3 components as mentioned above 2 : 12.38g; H 3 BO 3 : 6.77g; SiO 2: 0.10g; ZnO: 1.34g; CaCO 3 : 0.99g; Na 2 CO 3 : 0.70g; NaBr: 2.70g; Cs 2 CO 3 : 4.86g; PbBr 2 : 2.13g; SrBr 2 : 2.07g. Add alcohol and zirconia grinding balls to the weighed raw materials in the mixing bottle, put them into the sample mixer and mix them thoroughly, then place them in a closed corundum crucible and keep them warm at 1200°C for 30 minutes to obtain a glass melt;

[0059] 2) Place the glass melt in a copper mold to form it quickly, then place it in a muffle furnace at 360°C for 3 hours for annealing, and obtain a colorless transparent glass after cooling;

[0060] 3) Cut the obtained transparent glass into a specific size for heat treatment, the heat treatment system is 460-550 ° C for 10 hours, and obtain the glass...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
energyaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of luminescent glass and photoelectric materials, in particular to Sr<2+> doped CsPbBr3 quantum dot germanium borosilicate glass, a preparation method and an application thereof. The Sr<2+> doped CsPbBr3 quantum dot germanium borosilicate glass comprises GeO2, B2O3, SiO2, ZnO, CaO, Na2O, NaBr, Cs2O, PbBr2 and SrBr2. The CsPbBr3 quantum dots are successfully prepared in the germanium borosilicate glass by adjusting the basic composition of the glass and a heat treatment system. The size regulation and control of the CsPbBr3 quantum dot and continuous adjustable absorption and luminescence in a green light range are realized, and the stability of the CsPbBr3 quantum dot is improved. Then SrBr2 is introduced to replace PbBr2, the proportion of Pb<2+> / Sr<2+>is adjusted, and the luminous efficiency of the quantum dot is improved.

Description

technical field [0001] The invention relates to the field of luminescent glass and photoelectric materials, in particular to a Sr 2+ Doped CsPbBr 3 Quantum dot germanium borosilicate glass, preparation method and application. Background technique [0002] A semiconductor quantum dot refers to a semiconductor crystal structure whose size is smaller than or equal to its excitonic Bohr radius, and where the movement of carriers in three dimensions is restricted. When the size of the bulk material is gradually reduced to the nanometer level, the electronic energy level changes from continuous to discrete and discrete, the band gap energy increases, and the absorption and luminescence spectra are blue-shifted, which has far superior optoelectronic properties than bulk materials. [0003] CbBr 3 Quantum dots emit light in the green light band, with a bandgap energy of 2.30eV, and have the advantages of large exciton binding energy, long carrier mobility, narrow emission spectru...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C10/16C03C4/12C03C4/02C03B5/16C03B25/00C03B32/02
CPCC03B5/16C03B25/00C03B32/02C03C4/02C03C4/12C03C10/16
Inventor 王静王蒙蒙韩建军刘超阮健谢俊
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com