Integral bleeder circuit based on composite dielectric gate double-transistor photosensitive detector

Abstract

The invention discloses an integral bleeder circuit based on a composite dielectric gate photosensitive detector. The composite dielectric gate photosensitive detector comprises an MOS-C part and an MOSFET part, the integral bleeder circuit comprises an integral circuit, a pulse generation circuit and a bleeder circuit which are connected in sequence, and the input end of the integral circuit is connected with an N-type source region of the MOSFET part; the integrating circuit carries out linear or nonlinear integration on input signal charges, when the charges stored in the integrating circuit exceed a certain fixed threshold value, synchronous or asynchronous pulse signals are generated through the pulse generating circuit, and the charges in the integrating circuit are discharged to a certain fixed value through the bleeder circuit. According to the integral bleeder circuit, the integral bleeder function is achieved only through one comparator and a plurality of CMOS devices, and compared with a traditional integral bleeder circuit which is large in area and high in power consumption and is achieved through a plurality of operational amplifiers, the integral bleeder circuit is higher in energy efficiency and more beneficial to the use of a miniaturized system.

Description

technical field [0001] The invention relates to an integrating and discharging circuit based on a composite dielectric gate double-transistor photosensitive detector, belonging to the field of integrated circuits. Background technique [0002] CCD and CMOS-APS, as the two most common imaging devices at present, have their own limitations. Due to its complex control timing and voltage requirements, CCDs work slowly and are not easy to integrate; CMOS-APS uses photodiodes and complex structures, resulting in low fill factor and low full well charge. [0003] In a number of existing patents, such as CN201210442007, a dual-transistor photodetector is proposed. The sensor is characterized in that a single semiconductor device can achieve complete reset, photosensitive and readout functions, thus forming a complete pixel, which can Greatly improves pixel fill factor. As a new generation of imaging devices, the composite dielectric gate double transistor photodetector has faster ...

AI Technical Summary

Problems solved by technology

Most of the existing integral bleeder circuits are implemented by cascading multiple operational amplifiers, which consumes a lot of power and has a large area, which is not conducive to the miniaturization of the chip.

Images