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Single crystal growth furnace and single crystal growth method

A growth furnace and crystal growth technology, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of uncontrollable single crystal yield and difficult monitoring of single crystal growth process, so as to avoid invalid production and save Production cost, effect of improving yield and product quality

Active Publication Date: 2020-08-21
合肥天曜新材料科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the problems in the prior art that the single crystal growth process is difficult to monitor and the single crystal yield cannot be controlled, the present invention aims to provide a single crystal growth furnace and a single crystal growth furnace that can monitor the single crystal growth process and can cope with the emergence of polycrystals. method

Method used

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  • Single crystal growth furnace and single crystal growth method
  • Single crystal growth furnace and single crystal growth method
  • Single crystal growth furnace and single crystal growth method

Examples

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Effect test

Embodiment 1

[0077] Embodiment 1 single crystal growth furnace

[0078] Such as Figure 1-3 As shown, the single crystal growth furnace 1 includes a furnace body 11, an observation device access hole 12, a laser heating device access hole 13, a protection member 14, and a heat preservation door. Other conventional components in a single crystal growth furnace, such as components forming a temperature field, are not shown.

[0079] The observation device access hole 12 is arranged on the furnace body 11 (ie, the furnace wall). Such as figure 2 As shown, in this embodiment, three observation device insertion holes 12 are provided, which are evenly distributed on a cross section of the furnace body 11 . The observation device access hole 12 is cylindrical, allowing the observation device to extend into it to observe the crystal growth inside the single crystal growth furnace 1 . Those skilled in the art know that the observation device insertion hole 12 can also have other shapes, which ...

Embodiment 2

[0084] Embodiment 2 single crystal growth system

[0085] The single crystal system of this embodiment includes the single crystal growth furnace 1 described in Embodiment 1, and also includes a crucible 2, an observation device (not shown), and a laser heating device (not shown).

[0086] The crucible 2 is arranged inside the single crystal growth furnace 1 , and optionally, the central axis of the crucible 2 coincides with the central axis of the single crystal growth furnace 1 . In this embodiment, the crucible 2 is a quartz crucible, and the crucible 2 can be divided into three regions: a cylindrical first region 21 with the smallest diameter, a cylindrical third region 23 with the largest diameter, and a cylindrical third region located between the first region 21 and the cylindrical third region. A conical second region 22 between the three regions 23 . In one embodiment, the observation device access hole 12 and the laser heating device access hole 13 of the single cry...

Embodiment 3

[0091] Embodiment 3 single crystal growth method

[0092] Single crystal growth was performed using the single crystal growth furnace as in Example 1, or the single crystal growth system as in Example 2. In this embodiment, the crucible is a quartz crucible, and a positioning scale is fixed on the outside of the crucible, the laser source of the laser heater is a fiber laser, and the production of CdZnTe single crystal is carried out by a vertical gradient fixation method.

[0093] Pre-production preparation: Before production, insert the camera of the high-temperature-resistant camera system into the observation device insertion hole 12 of the single crystal growth furnace 1, and the front end of the camera does not protrude out of the hole to reduce damage to the camera due to high temperature. Close the thermal insulation door outside the laser heating device insertion hole 13. The raw material is placed in a quartz crucible, and the temperature field of the single crystal...

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Abstract

The invention discloses a single crystal growth furnace. The furnace wall is provided with a group of observation device intervention holes which are used for accommodating observation devices for observing the growth condition of a crystal, a group of laser heating device intervention holes which are used for accommodating laser heating devices for heating and eliminating polycrystalline grain boundaries, and a group of protection pieces which are arranged at the ends, located on the inner side of the furnace wall, of the laser heating device intervention holes and used for containing and protecting the laser heating devices. The invention also discloses a single crystal growth method which comprises the step of heating and melting the grain boundary by using the laser heating devices when the grain boundary is found by the observation devices. The grain boundary is found in time through real-time monitoring, the grain boundary area is melted through laser heating to correct the growth process, or polycrystal is controlled on the outermost layer of a final product, the yield and the product quality are greatly improved, and a large amount of production cost is saved.

Description

technical field [0001] The invention relates to the field of crystal preparation, in particular to a single crystal growth furnace and a single crystal growth method. Background technique [0002] Single crystal means that there is only one grain in a macroscopic crystal body, and its internal basic structure is regularly arranged in three-dimensional space. The current production of CdZnTe single crystal adopts the principle of solidification from liquid to solid, carried out in high temperature furnace. The main methods are Bridgeman method (Bridgeman) and vertical gradient freezing method (Vertical Gradient Freeze, VGF). The Bridgman method adopts a fixed temperature field design in the furnace. During production, the container holding the liquid and the furnace are relatively moved, so that they are in different positions in the furnace to obtain different ambient temperature conditions. The vertical gradient solidification method adopts a variable temperature field de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00
CPCC30B11/003C30B11/005C30B11/006
Inventor 庞昊谢雨凌
Owner 合肥天曜新材料科技有限公司
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