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Method for in-situ characterization of heterogeneous interface state by using diamond NV color center

A heterogeneous interface and diamond technology, which is applied in semiconductor/solid-state device testing/measurement, Raman scattering, electrical components, etc., can solve the problem of electron transport characteristics, such as the difficulty of combining the two phases of the heterogeneous interface, and save time. Labor cost, method is simple and easy to operate

Active Publication Date: 2020-08-25
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003]The purpose of the present invention is to solve the problem of charge state distribution, electron transport characteristics, surface terminal attachment and heterointerface The uniformity of two-phase combination is difficult to be accurately measured by conventional methods, and a method for in-situ characterization of heterogeneous interface states using diamond NV color centers is provided

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  • Method for in-situ characterization of heterogeneous interface state by using diamond NV color center
  • Method for in-situ characterization of heterogeneous interface state by using diamond NV color center
  • Method for in-situ characterization of heterogeneous interface state by using diamond NV color center

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specific Embodiment approach 1

[0026] Specific implementation mode 1: In this implementation mode, the method of using diamond NV color centers to characterize the heterogeneous interface state in situ is implemented according to the following steps:

[0027] 1. Cleaning:

[0028] Cleaning the diamond substrate to obtain a cleaned diamond substrate;

[0029] 2. Growth of NV core layer:

[0030] Put the cleaned diamond substrate into the CVD growth chamber, vacuumize the chamber, set the flow rate of hydrogen to 180-220sccm, and the air pressure in the chamber to 8-12mbar, start the microwave generator, activate the plasma, and clean the surface of the diamond substrate Raise the temperature to 850-950°C, feed methane and nitrogen, control the flow ratio of methane: nitrogen: hydrogen to be (8-12): (0.1-0.2): (160-240), and grow the diamond NV color center layer to obtain growth Diamond of NV color center layer;

[0031] 3. Characterization of Raman spectrum:

[0032] Use a microscope to focus on the NV ...

specific Embodiment approach 2

[0042] Embodiment 2: This embodiment differs from Embodiment 1 in that step 1 puts the diamond substrate in acetone, deionized water, and absolute ethanol in sequence for ultrasonic cleaning.

specific Embodiment approach 3

[0043] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that step two cabins are vacuumed, so that the vacuum degree in the cabin is 3.0×10 -6 ~5.0×10 -6 mbar.

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Abstract

The invention discloses a method for in-situ characterization of a heterogeneous interface state by using a diamond NV color center, which belongs to the technical field of semiconductor materials anddevices, and aims to solve the problem that charge state distribution and electron transport characteristics at a two-phase connected interface of a heterojunction are difficult to accurately measureby adopting a conventional method in the prior art. The characterization method comprises the following steps of 1, cleaning a diamond substrate, 2, growing an NV color center layer on the surface ofthe diamond substrate through a CVD method, 3, focusing on an NV color center layer growing on the diamond by using a microscope, and measuring a first Raman spectrum at a test point, 4, growing a heterojunction to be measured on the surface of the diamond on which the NV color center layer grows, 5, measuring the Raman spectrum at the test point again, and comparing the first Raman spectrum at the test point with the second Raman spectrum. According to the method, the thin layer containing the NV color center grows on the diamond sub-surface layer at the interface joint by using the MPCVD method, so that the change of the heterogeneous interface state can be accurately characterized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and devices, and relates to a method for in-situ measuring the performance of the interface state between diamond and heterogeneous materials by using NV color centers on the subsurface of diamonds. Background technique [0002] Diamond belongs to a wide-bandgap semiconductor material with excellent performance. It forms diamond-based heterojunction devices with heterogeneous materials such as metals, other semiconductor materials, and insulators. Applied meaning. Among them, the performance state of the interface plays a key role in improving the performance of the device. Interface electronic state, transport characteristics and other properties are usually difficult to measure accurately by conventional methods, thus becoming the main obstacle limiting the performance improvement of diamond heterojunction devices. The diamond color center is a kind of point defect with excelle...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G01N21/65
CPCH01L22/12H01L22/20G01N21/65
Inventor 朱嘉琦张森刘康代兵韩杰才
Owner HARBIN INST OF TECH