Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of solar cell conductive paste, glass frit and solar cell

A technology of solar cells and conductive pastes, applied to conductive materials dispersed in non-conductive inorganic materials, circuits, photovoltaic power generation, etc., can solve the problems of long ball milling time, large particle size, poor wettability, etc., and achieve high battery efficiency , Excellent bonding strength

Active Publication Date: 2021-10-08
CHANGZHOU JUHE NEW MATERIAL CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, the researchers also found that the softening point of the Pb-Bi-Si glass system is relatively high, the ball milling time during the preparation process is long and the particle size is too large, resulting in poor wettability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of solar cell conductive paste, glass frit and solar cell
  • A kind of solar cell conductive paste, glass frit and solar cell
  • A kind of solar cell conductive paste, glass frit and solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] 【Sample making】

[0052] (1) Making tellurium-based glass:

[0053] Prepare TeO 2 、 Bi 2 o 3 、WO 3 , ZnO, Al 2 o 3 , LiO 2 According to the ratio shown in Table 1, these glass raw materials were weighed and prepared, and finally small sample glasses A-1 to A-7 were made. Among them, A-1 to A-3 and A-8 are only comparative examples, and A-4 to A-7 are tellurium-based glasses containing no lead, zinc and silicon in this example, and lithium bismuth tellurium as an essential component.

[0054] Table 1 Glass-forming situation (wt%) of sample glass of different formulations

[0055] TeO 2

Bi 2 o 3

WO 3

ZnO SiO 2

al 2 o 3

Li 2 o

Glass formation A-1 50 26 7 4 3 0.2 9.8 Phase A-2 70 10 9 2 1.5 0.2 7.3 Phase A-3 60 25 9 / 1.5 0.2 4.3 partial phase separation A-4 65 18.8 9 / / 0.2 7 good A-5 55 20 15.8 / / 0.2 9 good A-6 50 35.8 9 / / 0.2 5 ...

Embodiment 2

[0075] 【Sample evaluation】

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a solar cell conductive paste, which contains conductive powder, mixed glass and organic phase; wherein, the mixed glass includes the following two types of glass components: the first type of glass is selected from lead-zinc-silicon, At least one kind of tellurium-based glass whose essential component is tellurium-bismuth-lithium; the second type of glass is at least one kind of lead-silicate-based glass whose essential component is lead-silicon-vanadium and does not contain tellurium-bismuth. The invention also provides a glass frit and a solar cell. The EL detection of the solar cell prepared by using the conductive paste of the invention is normal, the cell efficiency is high, and the bonding strength is excellent.

Description

technical field [0001] The invention belongs to the technical field of solar cell paste, and in particular relates to the preparation of Te-Bi-Li lead-free zinc-silicate glass frit and Pb-V-Si tellurium-bismuth-free glass frit, and the conductive paste prepared with the two glass frits. Background technique [0002] A conventional silicon solar cell consists of a front electrode, an anti-reflection film, a P-type silicon semiconductor substrate, an N-type diffusion layer, and a back electrode. With the continuous improvement of battery technology, a passivation layer is added on the semiconductor diffusion layer to improve efficiency. The passivation layer is generally composed of aluminum oxide, silicon oxide, etc., and the anti-reflection film is generally composed of silicon nitride. In addition, cell manufacturers' demand for efficiency makes the diffusion resistance of silicon wafers continue to increase, and the PN junction changes from deep to shallow. [0003] As th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/16H01B1/22H01L31/0224C03C3/12
CPCC03C3/12H01B1/16H01B1/22H01L31/022425Y02E10/50
Inventor 敖毅伟万莉涂小平姜钧天朱立波刘海东
Owner CHANGZHOU JUHE NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com