Photoresist removing device and method for removing photoresist

A photoresist and nano-bubble technology, applied in the field of photoresist removal and photoresist removal device, can solve the problems of high cost, high sulfuric acid consumption, device damage, etc., meet the requirements, improve the removal efficiency, and reduce the production cost cheap effect

Pending Publication Date: 2020-09-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the exothermic reaction between hydrogen peroxide and sulfuric acid, the process temperature is 90-150 ° C, high temperature will cause damage to some devices, and the consumption of sulfuric acid is high, and the cost is high

Method used

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  • Photoresist removing device and method for removing photoresist
  • Photoresist removing device and method for removing photoresist
  • Photoresist removing device and method for removing photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] In this embodiment, nanobubble ozone water O 3 The concentration of is 20ppm, the vertical distance between the first shower head and the silicon wafer is 15mm, the swing speed of the second end of the nanobubble pipeline is 8rpm, and the remaining process parameters of photoresist cleaning are shown in Table 1:

[0079]

[0080] Table 1 Photoresist cleaning process parameters

Embodiment 2

[0082] In this embodiment, nanobubble ozone water O 3 The concentration is 50ppm, the vertical distance between the first shower head and the silicon wafer is 20mm, the swing speed of the second end of the nanobubble pipeline is 8rpm, and the rest of the photoresist cleaning process parameters are shown in Table 2:

[0083]

[0084] Table 2 Photoresist cleaning process parameters

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Abstract

The invention discloses a photoresist removing device and a method for removing photoresist. The device comprises an ozone water generator, a nano-bubble generator, an ozone pipeline and a nano-bubblepipeline, the first end of the ozone pipeline is communicated with an outlet of the ozone water generator, and the second end of the ozone pipeline is communicated with an inlet of the nano-bubble generator; the first end of the nano-bubble pipeline is communicated with an outlet of the nano-bubble generator, and the second end of the nano-bubble pipeline is used for corresponding to a silicon wafer from which photoresist is to be removed. According to the invention, by adopting a nano-bubble ozone water removal mode, the photoresist removal efficiency of the surface of the silicon wafer canbe improved, the cleaning process is pollution-free, the manufacturing cost of the nano-bubble ozone water is low, and patterns on the surface of the silicon wafer are not damaged while the photoresist is removed, so that the requirements of the existing process for the silicon wafer can be met, and the silicon wafer can achieve the designed device characteristics.

Description

Technical field [0001] The invention relates to the technical field of photoresist removal, in particular to a photoresist removal device and a method for removing photoresist. Background technique [0002] Photoresist, also known as photoresist, is an organic compound that is sensitive to light. Photoresist is widely used in the manufacture of integrated circuits. In the semiconductor process, photolithography is used to spin-coat the surface of silicon wafers. Adhesive, photosensitive adhesive is used to form the required pattern on each structural surface through exposure, development and etching, and then the photoresist on the surface of the silicon wafer is removed. [0003] In the related art, the main methods for removing photoresist are ashing and wet cleaning. Dry de-glue requires a high cost, and it is easy to cause damage to the material under the photoresist. The commonly used reagent for wet cleaning and removal of photoresist is SPM. The cleaning steps are as follo...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/422
Inventor张凇铭惠世鹏刘效岩
OwnerBEIJING NAURA MICROELECTRONICS EQUIP CO LTD