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Interface optimization type perovskite solar cell and preparation method thereof

A technology for solar cell and interface optimization, applied in the field of solar cells, can solve the problems of harsh conditions and high optimization cost, and achieve the effects of good stability, expansion of device material selection space, and simple preparation process

Pending Publication Date: 2020-09-11
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, experiments have proved that the conditions required for material optimization are harsh, and the cost of optimization is relatively large.

Method used

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  • Interface optimization type perovskite solar cell and preparation method thereof
  • Interface optimization type perovskite solar cell and preparation method thereof
  • Interface optimization type perovskite solar cell and preparation method thereof

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Embodiment 1

[0029] Example 1 An interface-optimized perovskite solar cell, such as figure 1 As shown, from bottom to top are conductive glass substrate 1 , electron transport layer 2 , perovskite functional layer 3 , hole transport layer 4 , hole modification layer 5 and cathode electrode 6 .

[0030] The material of the hole transport layer 4 is SPIRO-OMeTAD; the material of the hole modification layer 5 is HAT-CN; the cathode electrode 6 is an Ag electrode; the material of the conductive glass substrate 1 is tin oxide doped with fluorine; the electron transport layer 2 The material is TiO 2 ; The material of the perovskite functional layer 3 is CH 3 NH 3 PB 3.

[0031] The thickness of the conductive glass substrate 1 is 3mm; the thickness of the electron transport layer 2 is 100nm; the thickness of the perovskite functional layer 3 is 300nm; the thickness of the hole transport layer 4 is 200nm; the thickness of the hole modification layer 5 is 10nm; The thickness of the cathode el...

Embodiment 2

[0039] Embodiment 2 is an interface-optimized perovskite solar cell and its preparation method. The difference from Embodiment 1 is that the hole modification layer 5 of this embodiment has a thickness of 5 nm.

Embodiment 3

[0040] Embodiment 3 is an interface-optimized perovskite solar cell and its preparation method. The difference from Embodiment 1 is that the hole modification layer 5 of this embodiment has a thickness of 15 nm.

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Abstract

The invention relates to an interface optimization type perovskite solar cell, which sequentially comprises a conductive glass substrate, an electron transport layer, a perovskite functional layer, ahole transport layer, a hole modification layer and a cathode electrode from bottom to top. The material of the hole transport layer is selected from one or more of SPIRO-OMeTAD, P3HT and PTAA, the material of the hole modification layer is HAT-CN, and the cathode electrode is a metal electrode or a non-metal electrode; and the thickness of the hole modification layer is 5-15 nm. The invention discloses a perovskite solar cell capable of simultaneously improving device stability and photoelectric conversion efficiency and a preparation method thereof.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an interface-optimized perovskite solar cell and a preparation method thereof. Background technique [0002] Perovskite solar cells are currently a research hotspot in the utilization of photovoltaic devices because of their low cost and simple structure. In 2009, Japanese researchers such as Miyasaka reported for the first time that organo-lead halides with a perovskite structure were used as photoelectric conversion materials for liquid electrolyte dye-sensitized solar cells. Due to the poor stability of the perovskite light-absorbing layer in the liquid electrolyte, the photoelectric conversion efficiency of this experiment only reached 3.81%. In order to avoid the use of liquid electrolytes, some studies have used solid-state hole-transport material SPIRO-MEOTAD as the hole-transport layer of perovskite solar cells to increase the photoelectric conversion efficiency to 1...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/12H10K85/30H10K30/81H10K30/00Y02E10/549Y02P70/50
Inventor 陈静王照奎
Owner SUZHOU UNIV
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