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Silicon wafer cleaning method and silicon wafer cleaning equipment

A technology for cleaning equipment and silicon wafers, which is applied in the direction of using liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., and can solve the problems of epitaxial orange peel and affecting the surface quality of epitaxial wafers, etc.

Active Publication Date: 2022-02-01
XUZHOU XINJING SEMICON TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the surface roughness of the silicon wafer substrate increases, it will cause fogging defects in the epitaxial layer. If the surface roughness is large enough, pits (holes or pits) and epitaxial orange peels will occur, which will seriously affect the surface quality of the epitaxial wafer.

Method used

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  • Silicon wafer cleaning method and silicon wafer cleaning equipment
  • Silicon wafer cleaning method and silicon wafer cleaning equipment
  • Silicon wafer cleaning method and silicon wafer cleaning equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] The cleaning solution is a mixture of ammonia, hydrogen peroxide and ultrapure water. The number of silicon wafers (8 inches) to be cleaned in this batch is 25×4. Before cleaning, the temperature of the cleaning solution is heated to the set temperature of 65°C. Stop heating, put the batch of silicon wafers into the cleaning solution, and at the same time, accompanied by ultrasonic vibration and circulating filtration. After the set time reaches 7 minutes, take out the silicon wafers and measure the surface roughness Ra1 of the batch of silicon wafers.

Embodiment 2

[0080] To clean the same number of silicon wafers, before cleaning, heat the cleaning solution to the same set temperature and stop heating, put the batch of silicon wafers into the cleaning solution, and at the same time, accompanied by ultrasonic vibration and circular filtration, the cleaning set time is the same Specifically, after cleaning for 3 minutes, turn on the cooling device to assist in cooling down. The cooling rate is 2°C / min. After reaching the set time of 7 minutes, take out the silicon wafers and measure the surface roughness of the batch of silicon wafers as Ra2.

Embodiment 3

[0082] To clean the same number of silicon wafers, before cleaning, heat the cleaning solution to the same set temperature and stop heating, put the batch of silicon wafers into the cleaning solution, and at the same time, accompanied by ultrasonic vibration and circular filtration, the cleaning set time is the same Specifically, when the temperature naturally drops to 60°C during the cleaning process, the cooling device is turned on to assist in cooling. The cooling rate is 2°C / min. After reaching the set time of 7 minutes, take out the silicon wafers and measure the surface roughness of the batch of silicon wafers for Ra3.

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Abstract

The invention discloses a silicon chip cleaning method and silicon chip cleaning equipment, comprising the following steps: Step 1: heating the SC1 cleaning solution to a set temperature and then stopping heating, wherein the SC1 cleaning solution is ammonia water, hydrogen peroxide and ultrapure water Form a mixed solution; step 2: immerse the polished silicon wafer in the cleaning solution, and clean it with circular cleaning and ultrasonic vibration; step 3: take out the silicon wafer after the cleaning time reaches the set time, and then heat the cleaning solution to Set the temperature, and clean the next batch of silicon wafers according to the above steps. The cleaning method of the silicon chip of the present invention adopts cooling and cleaning, which achieves the effect of cleaning the microparticles on the surface of the silicon chip and relatively reduces the surface roughness.

Description

technical field [0001] The invention relates to the technical field of silicon wafer cleaning, in particular to a silicon wafer cleaning method and silicon wafer cleaning equipment. Background technique [0002] In related technologies, after the silicon wafer is polished, there will be polishing residues on the surface of the silicon wafer. In order to remove the residue on the surface of the silicon wafer, the silicon wafer needs to be cleaned. The cleaning method is mainly to use high-temperature SC1 (ammonia / hydrogen peroxide / ultrapure water ) to microetch the surface of the silicon wafer. The SC1 cleaning solution in the chemical tank is an alkaline solution. Due to the influence of Zeta potential (Zeta potential, the potential of the shear plane), the charge on the surface of the microparticles in the solution and the charge on the surface of the silicon wafer repel each other, avoiding the silicon wafer The upper particles are adsorbed on the surface of the silicon w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/08B08B3/10B08B3/12B08B13/00H01L21/02H01L21/67
CPCB08B3/08B08B3/12B08B3/10B08B13/00H01L21/02052H01L21/67057H01L21/67109B08B2203/007
Inventor 陈建铭卢健平
Owner XUZHOU XINJING SEMICON TECH CO LTD