Cold cathode penning ion source device for high-energy ion implanter

Abstract

The invention discloses a cold cathode penning ion source device for a high-energy ion implanter, which comprises an ion source, a lead-out electrode, a permanent magnet and a cavity, wherein the ionsource comprises a protective cover, an anode cover, an anode seat, a cathode, a counter cathode, a cathode seat, insulating ceramic and a sleeve; the permanent magnet provides an axial magnetic field, the lead-out electrode supplies high voltage to provide an electric field, and electrons oscillate back and forth in the axial direction under the action of the electric field between the ion sourcecathode, the anode and the counter cathode and do helical motion under the action of the magnetic field; high-voltage interfaces are designed on the side surfaces of the cathode and the counter cathode and are electrified with the same voltage; the anode cover is grounded and is internally provided with a gas inlet pipeline and a lead-out opening. The water cooling pipeline is designed in the anode seat and has a cleanable function, so that the temperature of the ion source anode cover can be indirectly reduced, the structure of the anode cover lead-out opening is optimized through beam dynamics simulation, the ion lead-out efficiency is greatly improved, and the ignition risk is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and specifically relates to a cold-cathode Penning ion source used in a high-energy ion implanter. Background technique [0002] An important process in the semiconductor manufacturing process is ion implantation. Ion implantation refers to focusing, accelerating and deflecting ions from an ion source to irradiate the target material, thereby changing the chemical or physical properties of the target material. In semiconductor manufacturing, the target material is usually doped, such as N-type or P-type doped, by ion implantation, for example. [0003] An important component of an ion implanter is the ion source. The quality and speed of the plasma generated by the ion source will directly affect the quality and speed of the entire process. Among the current ion sources, the ECR ion source is easy to obtain a strong ion beam, but there are high-frequency power supply and microwave rad...

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Problems solved by technology

Among the current ion sources, the ECR ion source is easy to obtain a strong ion beam, but there are high-frequency power supply and microwave radiation problems, which will interfere with related analytical instruments; the temperature of the Penning ion source is too high during use, and the use of the cathode The service life is very short and needs to be replaced frequently, and the connection stability between the cathode and the anode is poor, which may easily cause a short circuit between the cathode and the anode

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