Multi-channel silicon carbide JFET structure with grooves and preparation process thereof

Abstract

The invention discloses a multi-channel silicon carbide JFET structure with a groove and a preparation process thereof. The structure comprises a silicon carbide substrate of which the doping type isa first conductive type; a silicon carbide epitaxial layer which is arranged on the front surface of the silicon carbide substrate, wherein the doping type of the silicon carbide epitaxial layer is afirst conduction type; a drain metal electrode which is arranged on the back surface of the silicon carbide substrate; a groove is etched on the silicon carbide epitaxial layer; a first gate injectionregion is arranged in the trench; a plurality of second gate injection regions and a plurality of source injection regions are additionally arranged on the silicon carbide epitaxial layer; wherein the doping type of the first gate injection region and the second gate injection region is a second conductive type, the doping type of the source injection region is a first conductive type, each of the first gate injection region and the second gate injection region is covered with a gate metal electrode, and each of the source injection regions is covered with an active metal electrode.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a multi-channel silicon carbide JFET structure with grooves and a preparation process thereof. Background technique [0002] Under high temperature working conditions of MOSFET devices, the gate SiC / SiO 2 There are stability issues with the interface. The turn-on and turn-off of the JFET device is controlled by the depletion region of the pn junction. At the same time, the turn-on voltage is less affected by temperature and has high temperature reliability. The withstand voltage capability of silicon-based JFET devices is not good. For ordinary SiC JFETs, their on-resistance is large, resulting in large conduction losses. And only simple circuit breaking can be realized, and the current control is not flexible. [0003] The excellent performance of silicon carbide (SiC) semiconductor makes SiC-based power electronic devices have outstanding advantages compar...

AI Technical Summary

Problems solved by technology

The withstand voltage capability of silicon-based JFET devices is not good. For ordinary SiC JFETs, their on-resistance is large, resulting in large conduction losses.

And only simple circuit breaking can be realized, and the current control is not flexible

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