Preparation method of silicon-carbon negative electrode material
A negative electrode material, silicon carbon technology, applied in the field of preparation of silicon carbon negative electrode materials, can solve the problems of uneven dispersion of silicon materials, easy pulverization of silicon particles, weak silicon-carbon bonding strength, etc., to overcome uneven dispersion, Stable product quality and high degree of effect
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[0023] A method for preparing a silicon-carbon negative electrode material, comprising the steps of:
[0024] S1. Mixing: mix silicon powder and graphite powder, and use mechanical stirring to obtain evenly mixed mixed powder;
[0025] S2. High temperature treatment: put the mixed powder in the high temperature treatment device, and carry out multi-stage vacuuming treatment on the high temperature treatment device, so that the pressure value in the high temperature treatment device reaches 50Pa-100Pa, and raise the temperature inside the device to 1000°C-1500°C , and keep it warm for 1-3 hours, then pass inert gas into the high-temperature treatment device until the pressure value reaches 0.4MPa-0.8MPa, continue to keep warm for 2-4 hours, and carry out pressure impregnation treatment on the mixed powder to make the silicon in the mixed powder The powder is melted to obtain nano-silicon, which is evenly distributed in the graphite powder, and combined with the graphite powder ...
Embodiment 1
[0033] S1. Mixing: Mix the monocrystalline silicon powder and the natural graphite powder according to the ratio of 5:95, use mechanical stirring for 2 hours, and the rotating speed of the stirring rod is 15r / min, to obtain a uniformly mixed powder;
[0034] S2. High-temperature treatment: put the mixed powder in a high-temperature treatment device, and perform multi-stage vacuum treatment on the high-temperature treatment device, so that the pressure value in the high-temperature treatment device reaches 50 Pa, raise the temperature in the device to 1000 ° C, and keep it warm for 1 hour , and then pass inert gas into the high-temperature treatment device until the pressure value reaches 0.4MPa, continue to keep warm for 2 hours, and carry out pressure impregnation treatment on the mixed powder to melt the silicon powder in the mixed powder to obtain nano-silicon, which is evenly distributed on the graphite In the powder, combine with graphite powder to form a silicon-carbon st...
Embodiment 2
[0037] S1. Mixing: Mix monocrystalline silicon powder and artificial graphite powder according to the ratio of 20:80, use mechanical stirring for 3 hours, and the rotating speed of the stirring rod is 20r / min, to obtain a uniformly mixed powder;
[0038] S2. High temperature treatment: put the mixed powder in the high temperature treatment device, and carry out multi-stage vacuuming treatment on the high temperature treatment device, so that the pressure value in the high temperature treatment device reaches 80Pa, raise the temperature in the device to 1300°C, and keep it warm for 2 hours , and then pass argon gas into the high-temperature treatment device until the pressure value reaches 0.6MPa, continue to keep warm for 3 hours, and carry out pressure impregnation treatment on the mixed powder to melt the silicon powder in the mixed powder to obtain nano-silicon, which is evenly distributed on the graphite In the powder, combine with graphite powder to form a silicon-carbon s...
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